https://doi.org/10.15407/spqeo4.03.159
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 3. P. 159-162.
PACS: 72.40.
Spectral dependence of the photomagnetic effect
in porous silicon
O.V. Vakulenko, S.V. Kondratenko
Taras Shevchenko Kyiv Univ., 6 Glushkova Prosp., 03127 Kyiv, Ukraine
e-mail: kondr@mail.phys.univ.kiev.ua.
B.K. Serdega
Institute of Semiconductor Physics NASU, pr. Nauki, 45, Kyiv, 03028
e-mail: bshl@polarget.semicond.kiev.ua
Abstract. Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indicates to the drift of the nonequilibrium charge carriers in the c-Si to the PS/c-Si boundary, that is presence of the increased spatial charge layer in c-Si. Relatively high value of the PME in the strong absorption region of the porous silicon indicates to the presence of the PME component caused by porous silicon material.
Keywords: photomagnetic effect, porous silicon, heterojunction.
Paper received 26.03.01; revised manuscript received 08.04.01; accepted for publication 13.07.01.
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