https://doi.org/10.15407/spqeo4.03.163
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 3. P. 163-167.
PACS 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx
Silver-related local centres in cadmium sulfide
L.V. Borkovskaya, B.M. Bulakh, L.Yu. Khomenkova, I.V. Markevich
Institute of Semiconductor Physics, NAS Ukraine, 45 prospect Nauki, Kyiv, 03028, Ukraine,
Tel: (044) 265-72-34, Fax: (044) 265-83-44, E-mail: bork@lumin.semicond.kiev.ua
Abstract. Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 102 V/cm at T = 300-450°C both parallel and perpendicular to the c-axis. The only local centre that was proved to appear after Ag introduction and to disappear after its extraction was deep acceptor responsible for emission band lm = 610 nm. Photo-enhanced defect reaction resulting in photosensitivity degradation was shown to occur after Ag incorporation. It was found that diffusion anisotropy took place, Ag diffusion being some times faster parallel to the c-axis.
Keywords: local centres, diffusion.
Paper received 07.06.01; revised manuscript received 18.06.01; accepted for publication 13.07.01.
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