https://doi.org/10.15407/spqeo4.03.173
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 3. P. 173-176.
PACS: 72.10.D, 72.20.J, 75.50.G, 78.20.E, 85.60
Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co
Irina I. Davidenko
Kiev Taras Shevchenko National University
Volodymyrska Str., 64, 01033, Kiev, UKRAINE
(+38 044 419-81-43, daviden@ukrpack.net)
Abstract. Features of charge transfer under influence of linearly polarized light in photomagnetic garnets YIG:Si and YIG:Co are clarified. Comparative analysis of these two gernets is necessary to create a basis for the theoretical model of photoinduced magnetic effects (PME) in garnets and in other materials as well as for explanation of experimental results of PME observation in YIG:Co even at room temperatures. Known experimental results for YIG:Co are adequately explained and described within the scope of developed simplified theoretical model.
Keywords: photoinduced magnetic effect, garnet, impurity center, charge transfer.
Paper received 12.03.01; revised manuscript received 16.05.01; accepted for publication 13.07.01.
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