Semiconductor Physics, Quantum Electronics & Optoelectronics, 4 (3), P. 196-198 (2001)
https://doi.org/10.15407/spqeo4.03.196


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 3. P. 196-198.

PACS: 78.66

Optical investigations of thermostimulated changes in an ensemble of CdSxSe1-x quantum dots embedded into borosilicate glass matrix

V.P. Kunets, V.O. Yukhymchuk, M.Ya. Valakh

Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, prospect Nauki, 45, Kiev, Ukraine  
E-mail address: kunets@qdots.semicond.kiev.ua

Abstract. We have employed the absorption and Raman spectroscopies to study thermostimulated changes in an ensemble of CdSXSe1-X quantum dots embedded into a borosilicate glass matrix. It is shown that additional annealing of the sample containing CdSXSe1-X  quantum dots leads to growth of the new ones with higher Se content and average radius approximately equal to the previous value. The conclusion was made that the new particles were grown due to diffusion of Cd, S and Se atoms from a glass matrix which was still remained in the oversaturated state, i.e. the recondensation growth stage (so-called “Ostwald ripening” or “diffusion-limited aggregation”) was not achieved during the annealing process. Some parameters of the dots were determined.

Keywords: nanocrystals, quantum dots, optical absorption, Raman scattering.

Paper received 10.06.01; revised manuscript received 23.06.01; accepted for publication 13.07.01.

 
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