Semiconductor Physics, Quantum Electronics & Optoelectronics, 4 (3), P. 239-247 (2001)
https://doi.org/10.15407/spqeo4.03.239


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 3. P. 239-247.

PACS 42.15.Dp, 42.25.Fx

Singular peculiarities of a plane wave diffracted on half-plane

S. Anokhov 1), A. Khizhnyak 2), R.Lymarenko 1), M. Soskin 3)

1)International Center «Institute of Applied Optics», National Academy of Sciences of Ukraine, 04053, Kyiv , Ukraine
phone: 380(44)2122158, fax 380(44)2124812, e-mail:anokhov@i.kiev.ua;
2)MetroLaser, Inc. Skypark Circle, Suite 100, Irvine, CA, 92614-6428, USA, e-mail: khizh@metrolaserinc.com;
3)”Institute of Physics” National Academy of Sciences of Ukraine, Prospect Nauki, 46, 02650, Kiev, Ukraine,e-mail: marats@vortex.kiev.ua.

Abstract. We analyzed singular properties of edge dislocation waves («EDW») - the main information component of the field formed at plane wave diffraction on half-plane. It is shown that analytical structure of this wave is completely identical to Cornu’s spiral, while physical simulation thereof requires joining the plane wave with an edge dislocation. Dislocations of this type are rather sensitive to action of any amplitude phase distortion on them that considering the impact of actual noise essentially hampers their experimental isolation in the pure form. At the same time spatial position of such dislocation may be effectively controlled by changing the amplitude and phase of one of the wave components. We considered peculiarities of structural evolution of the field at more complicated form of diffraction aperture.

Keywords: diffraction, singular optics, half-plane, edge dislocation

Paper received 27.04.01; revised manuscript received 04.07.01; accepted for publication 13.07.01.

 
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