Semiconductor Physics, Quantum Electronics and Optoelectronics, 4 (3) P. 168-170 (2001).
References
1. Visser E.P., Weyher J.L., Giling L.J. Microstructure changes after annealing of undoped and Cr-doped liquid encapsulated Czochralsky-grown GaAs, J.Appl.Phys., 69(8), pp.4234-4246(1991). https://doi.org/10.1063/1.348395
2. Mulenborn M., Alt H.Ch., Heberle A. Annealing behaviour of deep-level defects in semi-insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping,Ibid, 69(8), ðð.4310-4317(1991). https://doi.org/10.1063/1.348405
3. Yu P.W., Kuwamoto H. Photoluminescence of indium-alloyed semi-insulating GaAs subject to bulk heat treatments, Ibid.,70(2), ðð.954-959(1991).. https://doi.org/10.1063/1.349605
4. Ka O., Oda O., Yamada A., Makita Y. Low residual impurities assessment by photoluminescence in multistep waferannealed semi-insulating Czochralsky-grown GaAs, Appl.Phys. Lett., 61(9), pp.1095-1097(1992).. https://doi.org/10.1063/1.107679
5. Chao Chen, Bykovsky V.A., Tarasik M.I. Photoluminescence of undoped semi-insulating Gallium Arsenide, thermally treated at overpressure of arsenic vapor, Techn. Semicond.Phys. 28(1), pp. 35-40(1994)..
6. Bykovsky V.A., Strzelecka St., Hruban A. Recombination and electrical properties of SI-GaAs crystals,Proc. 8th Intern. Conf. on semi-insulating III-V materials (Warsaw, Poland, 1994 ), pp.225-228(1994)..
7. Bykovsky V.A., Korshunov F.P., Khruban A. Influence of thermal treatment modes on electrophysical and optical properties of semi-insulating monocrystals of Gallium Arsenide up to 80 mm in diameter, High-clean substances, 6 pp. 27-30(1996)
8. Kovalenko V.F., Prohorovitch A.V., Semenov V.V., Shutov S.V.Study of influence of thermal treatments in vacuum and sulfur vapor on the property of semi-insulating undoped GaAs,Optoelectronics and Semiconductor Technics, .32, pp. 171-174 (1997).
9. Glinchuk K.D., Litovchenko N.M., Prohorovich A.V.,Strilchuk O.N. Influence of thermal treatment on luminescence of semi-insulating undoped crystals GaAs, Optoelectronics and Semiconductor Technics, 35, pp.37-48 (2000).
10. Glinchuk K.D., Litovchenko N.M., Prohorovich A.V., Strilchuk O.N. Analysis of exciton luminescence of semi insulating specially undoped crystals of Gallium Arsenide, The same,pp.176-189.
11. Litovchenko N.M., Prohorovich A.V., Strilchuk O.N. Stimulated by heating-up changing of lux-brightness characteristics of semi-insulating specially undoped GaAs crystals, Semicond. Phys. Quantum Electronics Optoelectronics,pp.00-00( )