Semiconductor Physics, Quantum Electronics and Optoelectronics, 4 (3) P. 192-195 (2001).


References

1. P.A. Ivanov, V.E. Chelnokov, Recent development in SiC single - crystal electronics. // Semicond. Sci. Technol., (7),pp. 863-880 (1992).
https://doi.org/10.1088/0268-1242/7/7/001
2. P. Sircar, Laser and furnace annealed Au, Ag ohmic contacts on n+- GaAs. // Rev. Phys. Appl., 22 (9), pp. 967-969 (1987).
https://doi.org/10.1051/rphysap:01987002209096700
3. S.V. Baranetz, S.P. Dikiy, L.L. Fedorenko, E.B. Kaganovich, S.V. Svechnikov, Thermal stable laser produced low-ohmical contact to nanometer p-GaAs layers of barrier structures for fast optoelectronics devices. // Proc. SPIE, Optical Organic and Semiconductor Inorganic Materials, 2968, pp. 144-148 (1996).
https://doi.org/10.1117/12.266824
4. A.N. Pihtin, V.A. Popov, D.A. Yaskov, Ohmic contacts to semiconductors obtained by laser. // Sov. Phys. Tech. Sem., 3(11), pp. 1646-1648 (1969).
5. E.V. Kalinina, Yu.V. Kovalchuk, G.V. Prischepa, Jo.V. Smolskiy, Influence of the ultrashort laser pulses on the electrophysical properties of silicon carbide. // Sov. Journ.Tech. Phys. Lett., 11(11), pp. 669-671 (1985).
6. I.G. Opachko, L.L. Shimon, B.Ya. Khomiak, Ion emision dynamics at resonance and non-resonance absorption of laser irradiation by plasma on solids surface. // Ukr. Journ. Rhys.Invest., 1(1), pp. 46-51 (1996).
7. V.A. Emelianov, N.N. Fedosenko, E.V. Shershnev, Laser method for obtaining densely packed structure of thin films. // Sov. Laser technique and optoelectronic, 3-4, pp. 64-65 (1992).
8. K.K. Bourdel, A.S. Ahmanov, V.N. Makarov, A.Yu. Poroikov, A.V. Suvorov, N.G. Chechenin, Silicon carbide melting at eximer laser nanosecond pulses affection. // Sov.Journ. Tech. Phys. Lett., 14(13), pp. 1207-1211 (1988).