Semiconductor Physics, Quantum Electronics and Optoelectronics, 5 (3) P. 332-336 (2002).


References

1. V.G. Levich. Physico-chemical Hydrodynamics, Fizmatgiz, Moscow (1959) (in Russian).
2. C. Rogers, L. Raer, A. Filipossian. Analysis of flow between a wafer and pad during CMP processes. J. Electronic Mater.,27(10), pp. 1082 - 1087 (1998).
https://doi.org/10.1007/s11664-998-0141-0
3. J. Zabasajia, T. Merchant, Ng Belinda, D. Green. Modeling and characterization of tungsten chemical and mechanical polishing processes. J. Electrochem. Soc., V. 148(2), pp. 673- 677 (2001).
https://doi.org/10.1149/1.1341246
4. J.M. Steigerwald, S.P. Murarka, R.J. Gutman. Chemical Mechanical Planarization of Microelectronic Materials , Part1. Wiley and Sons, New York (1997).
https://doi.org/10.1002/9783527617746
5. V.A. Perevozchikov, V.D. Skupov. The Features of Abrasion and Chemical Processing of Semiconductor Surface. Nizhnii Novgorod State Univ. Publ., Nizhnii Novgorod (1992) (in Russian).
6. V.I. Karban', V.V. Rogov, H. Hofman et al. Processing of Semiconductor Materials. Naukova Dumka, Kiev (1982).
7. V.I. Karban', Yu.I. Borzakov. Processing of Single Crystals in Microelectronics. Radio i Svyaz', Moscow (1988).
8. H. Schlichting. Grenzschicht-Theorie. Translation: H.Schlichting. Theory of Boundary Layer. Nauka, Moscow(1974) (in Russian).