References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 7 (3) P. 251-262 (2004).

References

1. J.C. Burfoot, G.W. Taylor, Polar dielectrics and their applications, chapter 3, p. 41, The Macmillan Press, London (1979).

2. T.Granzow, U.Dorfler, Th.Woike, M.Wohlecke, R.Pankrath, M. Imlau, W. Kleemann, Influence of pinning effects on the ferroelectric hysteresis in cerium-doped Sr0.61Ba0.39Nb2O6 // Phys. Rev. B 63(17), p. 174101(7) (2001). https://doi.org/10.1103/PhysRevB.63.174101

3. Y. Gao, K. Uchino, D. Viehland, Effects of rare earth metal substituents on the piezoelectric and polarization properties of Pb(Zr, Ti)O3 - Pb(Sb, Mn)O3 ceramics // J. Appl. Phys. 92(4), pp.2094-2099 (2002). https://doi.org/10.1063/1.1490617

4. E. Tokumitsu, N. Tanisake, H. Ishiwara, Partial switching kinetics of ferroelectric PbZrxTi1-xO3 thin films prepared by sol-gel technique // Jpn. J. Appl. Phys. 33(9B), pp. 5201- 5206 (1994). https://doi.org/10.1143/JJAP.33.5201

5. P. Wurfel and I.P. Batra, Depolarization field induced instability in thin ferroelectric films experiment and theory // Phys. Rev. B, 8(11), pp. 5126-5133 (1973). https://doi.org/10.1103/PhysRevB.8.5126

6. I.P. Batra, P. Wurfel and B.D. Silverman, Phase transition, stability and depolarization field in ferroelectric thin films // Phys. Rev. B, 8(7), pp. 3257-3265 (1973). https://doi.org/10.1103/PhysRevB.8.3257

7. Y. Watanabe, A. Masuda, Ferroelectric self-field effect: implications for size effect and memory device // Integrated Ferroelectrics, 27, pp. 51-60 (1999). https://doi.org/10.1080/10584589908228455

8. T. Tamura, K. Matsuura, H. Ashida, K. Konda, S. Otani, Hysteresis variations of (Pb,La)(Zr,Ti)O3 capacitors baked in a hydrogen atmosphere // Appl. Phys. Lett. 74(22), pp. 3395-397 (1999). https://doi.org/10.1063/1.123356

9. J.C. Burfoot, Pyroelectric and ferroelectric thin film devices, chapter 12, p.731 in Active and passive thin film devices, pp. 697-741, London (1978)

10. Q.Y. Jiang, E.C. Subbarao and L.E. Cross, Effect of compositional and temperature on electric fatigue of La-doped lead zirconate titanate ceramics // J. Appl. Phys. 75(11), pp. 7433-7443 (1994). https://doi.org/10.1063/1.356637

11. V. Westphal, W. Kleemann and M.D. Glinchuk. // Phys. Rev. Lett., 68 p. 847 (1992). https://doi.org/10.1103/PhysRevLett.68.847

12. H. Haken, Synergetics, chapter 12, Springer-Verlag, Berlin (1978). 13. V.A. Zhirnov, Contribution to the theory of domain walls in ferroelectrics // Sov. Phys. JETP, 35(5), pp. 822-827 (1959).

14. N.A. Pertsev, A.G. Zembilgotov, A.K. Tagantsev, Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectirc Thin Films // Phys. Rev. Lett., 80, pp. 1988-1991 (1998). https://doi.org/10.1103/PhysRevLett.80.1988

15. V.M. Fridkin, Ferroelectrics semiconductors, chap.3, Consultant Bureau, New-York and London (1980).

16. M.E. Lines and A.M. Glass, Principles and Applications of Ferroelectrics and Related Phenomena, Oxford University Press, Oxford (1978).

17. G.M. Guro, I.I. Ivanchik, N.F. Kovtonuk, Semiconducting properties of barium titanate // Fiz. Tverd. Г’ela, 10(1), pp. 134- 143 (1968) [Sov. Phys.-Solid State, 10(1), pp. 100-109 (1968)].

18. R.Landauer, Electrostatic consideration in BaTiO3 domain formation during polarization reversal // J. Appl. Phys., 28(2), pp. 227-234 (1957). https://doi.org/10.1063/1.1722712

19. R.C.Miller and G.Weinreich, Mechanism for the sidewise motion of 180В° domain walls in barium titanate // Phys. Rev., 117(6), pp. 1460-1466 (1960). https://doi.org/10.1103/PhysRev.117.1460

20. Morozovska A.N., Eliseev E.A., Phenomenological Description of Disordering in Ferroelectric Materials Caused by Charged Defects// http://arXiv.org, cond-mat/0404073 (2004)

21. L.E. Cross, Relaxor ferroelectrics // Ferroelectrics, 76, pp. 241-245 (1987) https://doi.org/10.1080/00150198708016945

22. B. Jaffe, W.R. Cook and H. Jaffe, Piezoelectric Ceramics, chapter 3, p. 49, Academic Press, London and New York (1971). https://doi.org/10.1016/B978-0-12-379550-2.50008-9

23. M.D. Glinchuk, E.A. Eliseev, V.A. Stephanovich, The depolarization field effect on the thin ferroelectric films properties // Physica B, 332, pp. 356-370 (2002). https://doi.org/10.1016/S0921-4526(02)01271-1

24. M.D. Glinchuk, E.A. Eliseev, V.A. Stephanovich, R. Fahri, Ferroelectric thin films properties Depolarization field and renormalization of a bulk free energy coefficients // J. Appl. Phys., 93(2), pp. 1150-1159 (2003). https://doi.org/10.1063/1.1529091

25. T. Haccart, E. Cattan, D. Remiens, Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation // Semiconductor Physics, Quantum Electronics & Optoelectronics, 5 (1), pp 78-88 (2002). https://doi.org/10.15407/spqeo5.01.078