References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 8 (3) P. 019-024 (2005).

References

1. V.P. Afanas'ev, A.S. Gudovskikh, O.I. Kon'kov, M.M. Kazanin, K.V. Kougiya, A.P. Sazanov, I.N. Trapeznikova, and E.I. Terukov // Semiconductors 34(4), p. 477-480 (2000). https://doi.org/10.1134/1.1188010

2. M.A. Green, Crystalline and thin-film silicon solar cells: state of the art and future potential // J. Solar Energy, 74(3), p.181-192 (2003). https://doi.org/10.1016/S0038-092X(03)00187-7

3. A. Matsuda, Thin film silicon growth process and solar cell application // Jpn J. Appl. Phys. 43(12), p. 7909-7920 (2004). https://doi.org/10.1143/JJAP.43.7909

4. V.P. Afanas'ev, A.S. Gudovskikh, V.N. Nevedomski, A.P. Sazanov, A.A. Sitnikova, I.N. Trapeznikova, and E.I. Terukov, Effect of thermal treatment on structure and properties of a-Si:H films obtained by cyclic deposition // Semiconductors 36(2), p. 230-234 (2002). https://doi.org/10.1134/1.1453445

5. O.A. Golikova and M.M. Kazanin, Special features of photoelectric properties of nanostructured films of hydrogenated silicon // Semiconductors 35(10), p. 1187-1190 (2001). https://doi.org/10.1134/1.1410662

6. O.A. Golikova, Photoconductivity of nanostructured hydrogenated silicon films // Semiconductors 36(6), p. 691-694 (2002). https://doi.org/10.1134/1.1485672

7. V.P. Afanasiev, A.S. Gudovskikh, A.Z. Kazak-Kazakevich, A.P. Sazanov, I.N. Trapeznikova, and E.I. Terukov, TEM study of the formation and modification of nanocrystalline Si inclusions in a-Si:H films // Semiconductors 38(2), p. 221-224 (2004). https://doi.org/10.1134/1.1648381

8. A.N. Shmyryeva, T.V. Semikina, M.G. Dushejko, N. Bishena, Thin films of silicon-yttrium alloys // Book of Abstracts. Russian Symposium of Amorphous and Single Crystal Semiconductor, May-June, St-Petersburg, p. 144 (1998) (in Russian).

9. A.N. Shmyryeva, T.V. Semikina, M.G. Dushejko, Thin films of amorphous silicon-yttrium alloys // Book of Abstracts of Second Russian Conference ("Silicon-2000"), Moscow, February 9-11, 2000, p. 374-376 (in Russian).

10. J.E. Gerbi, P.M. Voyles, M.M.J. Treacy, J.M. Gibson, J.R. Abelson, Increasing medium-range order in amorphous silicon with low-energy ion bombardment // J. Appl. Phys. Lett. 82(21), p. 3665-3667 (2003). https://doi.org/10.1063/1.1578164

11. Daxing Han, J.D. Lorentzen, J. Weinberg-Wolf, L.E. McNeil, Qi Wang, Raman study of thin films of amorphous to microcrystalline silicon prepared by hot-wire chemical-vapor deposition // J. Appl. Phys. 94(5), p. 2930-2936 (2003). https://doi.org/10.1063/1.1598298

12. O.A. Golikova and M.M. Kazanin, Effect of nano-crystalline inclusions on the photosensitivity of amorphous hydrogenated silicon films // Semiconductors 34(6), p. 737-740 (2000). https://doi.org/10.1134/1.1188064

13. Daxing Han, Keda Wang, Jessica M. Owens, Lynn Gedvilas, Brent Nelson, Hotoe Habuchi, Masako Tanaka, Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition // J. Appl. Phys. 93(7), p. 3776-3783 (2003). https://doi.org/10.1063/1.1555680

14. A.H.M. Smets, W.M.M. Kessels, M.C.M. van de Sanden, Vacancies and voids in hydrogenated amorphous silicon // J. Appl. Phys. Lett. 82(10), p. 1547-1549 (2003). https://doi.org/10.1063/1.1559657

15. A.V. Nezhdanov, A.I. Mashin, A.F. Khokhlov, V.G. Shengurov, A.K. Yezhov Optical properties of structural heterogeneous silicon // Abstract book of IV International Conference on Amorphous and Microcrystalline Semiconductors, 5-7 July, St. Petersburg, Russia (2004) (in Russian).

16. Ilker Ay, Husein Tolukay, Optical transmission measurements on glow-discharge amorphous-silicon nitride films // Turk. J. Phys. 25, p. 215-222 (2001).