|
Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (3) P. 040-043 (2006).
DOI:
https://doi.org/10.15407/spqeo9.03.040
References
| 1. S.M. Sze, Physics of semiconductor devices, vol. 2. Mir, Moscow, 1984 (in Russian). | | | | 2. V.P. Astakhov, D.A. Gindin, V.V. Karpov, K.V. Sorokin, About influence of resistance of surface channel on dark current of quadrant p-i-n photodiodes on silicon // Prikladnaya fizika No 2, p. 79-85 (1999) (in Russian). | | | | 3. Yu.R. Nosov, Photodetectors in optoelectronics // Electronnaya tekhnika, ser. 2, 4(183), p. 33-36 (1986) (in Russian). | | | | 4. A.A. Ashcheulov, V.M. Godovanjuk, Yu.G. Dobrovolsky et al., Silicon p-i-n photodiode with little value of dark current // Proc. SPIE 3890, р. 119-124 (1999). | | | | 5. V.M. Yurgenman, M.A. Trishenkov, Photodiode response kinetics in carrier transit through the space-charge region // Radiotekhnika i elektronika ХХІІ, issue 6, p. 1028 (1977) (in Russian). | | | 6. V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky, Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions // Semiconductor Physics, Quantum Electronics and Optoelectronics 8(1), p. 83-86 (2005).
https://doi.org/10.15407/spqeo8.01.083 | | | | 7. Yu.G. Dobrovolsky, Explosion noise of silicon photodiodes // Fizika i khimiya tverdogo tela 6(2), p. 307-310 (2005) (in Russian). | | |
|
|