Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (3) P. 209-216 (2008).
DOI: https://doi.org/10.15407/spqeo11.03.209


References

1. I.Yu. Il'in, P.M. Lytvyn, I.V. Prokopenko, R.V. Konakova, V.V. Milenin, Yu.A. Tkhorik, L.S. Khazan, J. Breza, M. Kadlečikova, J. Liday, Mechanical stress in semiconductor structures, its role in device degradation and methods of its suppression // Funct. Mater. 3(1), p. 8-28 (1996).
2. A.E. Belyaev, J. Breza, E.F. Venger, M. Vesely, I.Yu. Il'in, R.V. Konakova, J. Liday, V.G. Lyapin, V.V. Milenin, I.V. Prokopenko, Yu.A. Tkhorik, Radiation Resistance of GaAs-based Microwave Schottky-barrier Devices. Some Physico-technological Aspects, Interpress Ltd, Kiev, 1998.
3. E.F. Venger, R.V. Konakova, G.S. Korotchenkov, V.V. Milenin, E.V. Rusu, I.V. Prokopenko, Interactions between Phases and Degradation Mechanisms in the Metal−InP and Metal−GaAs Structures, Public Corporation "Knizhnaya Tipografiya Nauchnoy Knigi", Kiev, 1999 (in Russian).
4. V.V. Milenin, R.V. Konakova, A junction layer of surface-barrier structures on Si and GaAs // Peterburgskii Zhurnal Elektroniki No 2, p. 13-26 (2003) (in Russian).
5. V.I. Strikha, E.V. Buzaneva, Physical Foundations of the Metal−Semiconductor Contact Reliability in Integrated Electronics, Radio i Svyaz', Moscow (1987) (in Russian).
6. V.I. Belyi, V.R. Belosludov, Surface properties of III−V compounds and physico-chemical processes at III−V−metal interface, In: Modern Problems of Physical Chemistry of Semiconductors, Nauka SO, Novosibirsk, 1989, p 43-90 (in Russian).
7. V.G. Bozhkov, K.V. Soldatenko, A.A. Yatis, Interaction between phases at metal−indium phosphide contacts and thermal stability of Schottky barriers made on their basis, In: Indium Phosphide in Semiconductor Electronics, Shtiintsa, Kishinev, 1988, p. 62-88 (in Russian).
8. A.P. Vyatkin, N.K. Maksimova, Effect of interactions between phases on structure and properties of metal−gallium arsenide contacts, In: Novel Materials of Electronic Engineering, Nauka SO, Novosibirsk, 1990, p. 32-48 (in Russian).
9. L.I. Brillson, Interaction of metals with semiconductor surface // Appl. Surface Sci. 11-12, p. 249-267 (1982).
https://doi.org/10.1016/0378-5963(82)90073-3
10. F. Bechstedt, R. Enderlein, Semiconductor Surfaces and Interfaces. Their Atomic and Electronic Structures. Akademie-Verlag, Berlin, 1988.
11. M.A. Nicolet, Diffusion barriers in thin films // Thin Solid Films 52, p. 415-443 (1978).
https://doi.org/10.1016/0040-6090(78)90184-0
12. H.J. Goldschmidt, Interstitial Alloys. Butterworths, London, 1967.
https://doi.org/10.1007/978-1-4899-5880-8
13. R.A. Andrievskii, Ya.S. Umanskii, Interstitial Phases. Nauka, Moscow, 1977 (in Russian).
14. G.V. Samsonov, Ya.S. Umanskii, Solid Compounds of Refractory Metals. Metallurgizdat, Moscow, 1957 (in Russian).
15. L.A. Seidman, Reactive deposition of titanium nitride layers in a vacuum and their use in contact metallization systems of semiconductor devices // Obzory po Elektronnoy Tekhnike. Ser. 2, Poluprovodnikov. Pribory No.6(1366) (1988) (in Russian).
16. N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin, Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals // Semiconductor Physics, Quantum Electronics and Optoelectronics 3(3), p. 359-370 (2000).
17. N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, I.N. Arsentyev, A.V. Bobyl, P.N. Brunkov, I.S. Tarasov, A.A. Tonkikh, V.P. Ulin, V.M. Ustinov, G.E. Cirlin, Diffusion-barrier contacts based on the TiN and Ti (Zr) Bx interstitial phases in the microwave diodes for the range of 75−350 GHz // Semiconductors 40(6), p. 734-738 (2006).
https://doi.org/10.1134/S1063782606060200
18. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, A.B. Kamalov, L.M. Kapitanchuk, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, V.V. Milenin, M.U. Nasyrov, Thermal-resistant TiBx−n-GaP Schottky diodes // Semiconductors 42(4), p. 453-457 (2008).
https://doi.org/10.1134/S1063782608040143
19. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Litvin, P.M. Litvin, V.V. Milenin, Interphase interactions and features of structural relaxation in TiBx−n-GaAs (InP, GaP, 6H-SiC) contacts subjected to active treatment // Semiconductors 38(7), p. 737-741 (2004).
https://doi.org/10.1134/1.1777591
20. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko, Technology and experimental studies of contacts for microwave diodes based on interstitial phases // Semiconductor Physics, Quantum Electronics and Optoelectronics 4(1), p. 93-105 (2001).
21. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Ageev, A.M. Svetlichny, S.I. Soloviev, T.S. Sudarshan, SiC Schottky-barier diodes formed with TiBx and ZrBx amorphous layers // Semiconductor Physics, Quantum Electronics and Optoelectronics 7(1), p. 60-62 (2004).
22. N.S. Boltovets, V.N. Ivanov, A.Yu. Avksentyev, A.E. Belyaev, A.G. Borisenko, O.A. Fedorovitsh, R.V. Konakova, Ya.Ya. Kudryk, P.M. Lytvyn, V.V. Milenin, A.V. Sachenko, Yu.N. Sveshnikov, High temperature contacts to GaN and SiC based on TiBx nanostructure layers // Mater. Sci. Forum 483-485, p. 1061-1064 (2005).
https://doi.org/10.4028/www.scientific.net/MSF.483-485.1061
23. N.S. Boltovets, N.M. Goncharuk, V.A. Krivutsa, V.E. Chaika, R.V. Konakova, V.V. Milenin, E.A. Soloviev, M.B. Tagaev, D.I. Voitsikhovskyi, Contacts for silicon IMPATT and pick-off diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics 3(3), p. 352-358 (2000).
24. I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, V.V. Milenin, E.V. Russu, Properties of barrier contacts with nanosize TiBx layers to InP // Semiconductors 42(7), p. 777-782 (2008).
https://doi.org/10.1134/S1063782608070051
25. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, Yu.N. Sveshnikov, Heat resistant Au−TiBx−n-GaN Schottky diodes, In: Proc. 16th Intern. Crimean Conference "Microwave and Telecommunication Technology" (CriMiCo 2006), Veber, Sevastopol (2006), p. 644-645.
https://doi.org/10.1109/CRMICO.2006.256141
26. M. Guziewicz, A. Piotrowska, E. Kamiska, K. Goaszewska, A. Turos, E. Mizera, A. Winiarski, J. Szade, Characteristics of sputter-deposited TiN, ZrB2 and W2B diffusion barriers for advanced metallizations to GaAs // Solid-State Electronics 43(6), p. 1055-1061 (1999).
https://doi.org/10.1016/S0038-1101(99)00024-6
27. L. Stafford, L.F. Voss, S.J. Pearton, H.T. Wang, F. Ren, Improved long-term thermal stability of InGaN/GaN multiple quantum well light-emitting diodes using TiB2- and Ir-based p-ohmic contacts // Appl. Phys. Lett. 90, 242103 (2007).
https://doi.org/10.1063/1.2748306
28. L. Voss, R. Khanna, S.J. Pearton, F. Ren, I. Kravchenko, Improved thermally stable ohmic contacts on p-GaN based on W2B // Appl. Phys. Lett. 88, 012104 (2006).
https://doi.org/10.1063/1.2161806
29. R. Khanna, S.J. Pearton, F. Ren, I.I. Kravchenko, Stability of Ti/Al/ZrB2/Ti/Au ohmic contacts on nGaN // Appl. Surf. Sci. 253(4), p.2340-2344 (2006).
https://doi.org/10.1016/j.apsusc.2006.04.042
30. R. Khanna, K. Ramani, V. Cracium, R. Singh, S.J. Pearton, F. Ren, I.I. Kravchenko, ZrB2 Schottky diode contacts on n-GaN // Appl. Surf. Sci. 253(4), p. 2315-2319 (2006).
https://doi.org/10.1016/j.apsusc.2006.04.041
31. R. Khanna, Development of high stable ohmic and Schottky contacts to n-GaN // A dissertation presented to the graduate school of the University of Florida in partial fulfillment of the requirements for the degree of Doctor of Philosophy, University of Florida (2007).
32. R. Khanna, S.J. Pearton, F. Ren, I.I. Kravchenko, CrB2 Schottky barrier contacts on n-GaN // J. Electrochem. Soc. 152(11), p. 6804-6807 (2005).
https://doi.org/10.1149/1.2039933
33. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin, I.V. Prokopenko, Phase and structural changes stimulated by rapid thermal processing in multilayer n-GaAs contacts // Semiconductors 37(9), p. 1114-1118 (2003).
https://doi.org/10.1134/1.1610130
34. I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barriers contacts to them and the properties of microwave diodes made on their basis // Semiconductor Physics, Quantum Electronics and Optoelectronics 8(4), p. 105-114 (2005).
https://doi.org/10.15407/spqeo8.04.105
35. N.S. Boltovets, V.V. Kholevchuk, R.V. Konakova, Ya.Ya. Kudryk, P.M. Lytvyn, V.V. Milenin, V.E. Mitin, E.V. Mitin, A silicon carbide thermistor // Semiconductor Physics, Quantum Electronics and Optoelectronics 9(4), p. 67-70 (2006).
https://doi.org/10.15407/spqeo9.04.067
36. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov, Development of high-stable contact systems to gallium nitride microwave diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics 10(4), p. 1-8 (2007).
37. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, A.B. Kamalov, L.M. Kapitanchuk, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, M.U. Nasyrov, P.V. Nevolin, Study of electrophysical properties of nonrectifying contacts to n-GaP in the 77−400 К temperature range, In: Proc. 5th Intern. Sci.-Techn. Conf. "Actual Problems in Physics", June 25-27, 2008, Baku, Azerbaijan (2008), p. 89-90 (in Russian).
38. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet, Mechanism of dislocationgoverned charge transport in Schottky diodes based on gallium nitride // Semiconductors 42(6), p. 689- 693 (2008).
https://doi.org/10.1134/S1063782608060092
39. O.A. Ageev, A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.V. Milenin, В.А. Pilipenko, Interstitial Phases in Semiconductor Devices and VLSI Technology. NTK "Institute of Single Crystals", Kharkov, 2008 (in Russian).