Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (3) P. 217-220 (2008).
DOI:
https://doi.org/10.15407/spqeo11.03.217
References
1. W.C. Oliver and G.M. Pharr, Measurement of hardness and elastic modulus by instrumented indentation: Advances in understanding and refinements to methodology // J. Mater. Res. 19 (3) (2004). https://doi.org/10.1557/jmr.2004.19.1.3 | | 2. R. Nowak, D. Chrobak, S. Nagao, D. Vodnick, M. Berg, A. Tukiainen, M. Pessa, Electric current spike phenomenon linked to nanoscale plasticity (in press). | | 3. Semiconductors: Group 5 Elements and 3-5 Compounds, ed. O. Madelung, In: Data in Science and Technology. Springer, Berlin, 1991. | | 4. F. Pollak, M. Cardona, K. Shaklee, Piezo-electroreflectance in GaAs // Phys. Rev. Lett. 16(21), p. 942-990 (1966). https://doi.org/10.1103/PhysRevLett.16.942 | | 5. S.M. Sze, Physics of Semiconductor Devices. Willey-Interscience Publ., New York, 1981. 6. D. Chrobak, K. Nordlund, and R. Nowak, Nondislocation origin of GaAs nanoindentation pop-in event // Phys. Rev. B 98, 045502 (2007). https://doi.org/10.1103/PhysRevLett.98.045502 | |
|
|