Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (3) P. 230-235 (2008).
DOI: https://doi.org/10.15407/spqeo11.03.230


References

1. I.Ya. Kucherov, O.V. Lyashenko, and V.M. Perga, The nonlinear transformation of acoustical and electrical oscillations in p-n junctions // Ukrainsky fiz. zhurnal 34(2), p. 222-224 (1989) (in Ukrainian).
2. L.V. Gorbits, O.V. Lyashenko, V.M. Perga, About the mechanism of acoustoelectric transformation in p-n junctions // Ukrainsky fiz. zhurnal 38(7), p. 1044-1046 (1993) (in Ukrainian).
3. O.V. Lyashenko and V.M. Perga, Acoustic emission for the diagnostic of semiconductor structures // Diagnostics Techniques for Semiconductor Materials Processing II, MRS Proc. 406, p. 449-456 (1996).
https://doi.org/10.1557/PROC-406-449
4. A.N. Gontaruk, D.V. Korbutyak, E.V. Korbut, V.F. Machulin, Ya.M. Olikh and V.P. Tartachnik, Ultrasound-stimulated degradation-relaxation effects in gallium phosphide light-emitting p-n structures // Technical Physics Letters 24(8), p. 608-610 (1998).
https://doi.org/10.1134/1.1262215
5. A.E. Lord, Acoustic emission, In: Physical Acoustics XI, ed. by W.P. Mason. Academic Press, New York and London, 1975, p. 289-353.
https://doi.org/10.1016/B978-0-12-477911-2.50011-9
6. V.P. Veleshchuk and O.V. Lyashenko, Acoustic emission of light-emitting structures on the A3 B5 base determined by direct current // Ukrainsky fiz. zhurnal 48(9), p. 981-985 (2003) (in Ukrainian).
7. G.O. Sukach, V.V. Kidalov, A.S. Revenko, V.M. Chobanyuk, D.M. Freik, Physical and chemical aspects of substrate materials for the epitaxial growing GaN films (Review) // Physics and chemistry of solid state 8(2) p. 227-239 (2007) (in Ukrainian).
8. V.P. Veleshchuk, O.V. Lyashenko, Yu.A. Myagchenko, and R.G. Chuprina, Evolution of electroluminescence spectra and the acoustic emission of epitaxial structures GaAsP // Zhurnal prikladnoi spektroskopii 71(4) p. 553-557 (2004) (in Russian).
https://doi.org/10.1023/B:JAPS.0000046297.98718.aa
9. V.P. Veleshchuk, O.I. Vlasenko, O.V. Lyashenko, and R.G. Chuprina, Acoustic emission and degradation processes in heterostructures of optoelectronic devices // Bulletin of the University of Kiev. Series: Physics & Mathematics. No. 7, p. 4-5 (2005).
10. T. Ikoma, M. Ogura, Y. Adachi, Acousticemission study of defects in GaP light-emitting diodes // Appl. Phys. Lett. 33(5), p. 414-415 (1978).
https://doi.org/10.1063/1.90397
11. M. Ogura, Y. Adachi, T. Ikoma, Acoustic emission from gallium arsenide single crystals during deformation // J. Appl. Phys. 50(11) p. 6745-6749 (1979).
https://doi.org/10.1063/1.325919
12. O.I. Vlasenko, Z.K. Vlasenko, Extended defects and their influence on the electronic properties of narrow-gap CdHgTe solid solutions // Optoelectronics and semiconductor technics No. 39, p. 27-50 (2004) (in Russian).
13. V.V. Evstropov, M. Dzhumaeva, Yu.V. Zhilyaev, N. Nazarov, A.A. Sitnikova and L.M. Fedorov, The dislocation origin and model of excess tunnel current in GaP p-n structures // Semiconductors 34(11), p. 1305-1310 (2000).
https://doi.org/10.1134/1.1325428
14. A.L. Polyakova, Deformation of Semiconductors and Semiconductor Devices. Nauka, Moscow, 1979, p. 230 (in Russian).
15. G.L. Bir, G.E. Pikus, Symmetry and Deformation Effects in Semiconductors. Nauka, Moscow, 1972, p. 584 (in Russian).
16. O. Ueda, H. Imai, T. Fujiwara, S. Yamakoshi, T. Sugawara, and T. Yamaoka, Abrupt degradation of three types of semiconductor light-emitting diodes at high temperature // J. Appl. Phys. 51(10), p. 5316-5325 (1980).
https://doi.org/10.1063/1.327445
17. W.A. Brantley, O.G. Lorimor, P.D. Dapkus, S.E. Haszhko, and R.H. Saul, Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy // J. Appl. Phys. 46(6), p. 2629-2637 (1975).
https://doi.org/10.1063/1.321941
18. D.R. James, S.H. Carpenter, Relationship between acoustic emission and dislocation kinetics in crystalline solids // J. Appl. Phys. 42(12) p. 4685-4697 (1971).
https://doi.org/10.1063/1.1659840
19. G.A. Sukach, E.P. Potapenko, V.V. Kidalov, P.F. Oleksenko, Nitrides of the third group - perspectives of development and application (Review) // Optoelectronics and Semiconductor Technics No. 38 p. 265-293 (2003) (in Russian).
20. E.F. Venger, R.V. Konakova, G.S. Korotchenkov, V.V. Milenin, E.V. Russu, I.V. Prokopenko, Interphase Interactions and Degradation Mechanisms in Metal-InP and Metal-GaAs Structures. КТNК, Кyiv, 1999, p. 260 (in Russian).
21. J.P. Hirth, and J. Lothe, Theory of Dislocations. Атomizdat, Мoscow, 1972, p. 600 (in Russian).
22. X. Guo, E.F. Schubert, Current crowding in GaN/InGaN light emitting diodes on insulating substrates // J. Appl. Phys. 90(8), p. 4191-4195 (2001).
https://doi.org/10.1063/1.1403665