Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (3) P. 230-235 (2008).
DOI:
https://doi.org/10.15407/spqeo11.03.230
References
1. I.Ya. Kucherov, O.V. Lyashenko, and V.M. Perga, The nonlinear transformation of acoustical and electrical oscillations in p-n junctions // Ukrainsky fiz. zhurnal 34(2), p. 222-224 (1989) (in Ukrainian). | | 2. L.V. Gorbits, O.V. Lyashenko, V.M. Perga, About the mechanism of acoustoelectric transformation in p-n junctions // Ukrainsky fiz. zhurnal 38(7), p. 1044-1046 (1993) (in Ukrainian). | | 3. O.V. Lyashenko and V.M. Perga, Acoustic emission for the diagnostic of semiconductor structures // Diagnostics Techniques for Semiconductor Materials Processing II, MRS Proc. 406, p. 449-456 (1996). https://doi.org/10.1557/PROC-406-449 | | 4. A.N. Gontaruk, D.V. Korbutyak, E.V. Korbut, V.F. Machulin, Ya.M. Olikh and V.P. Tartachnik, Ultrasound-stimulated degradation-relaxation effects in gallium phosphide light-emitting p-n structures // Technical Physics Letters 24(8), p. 608-610 (1998). https://doi.org/10.1134/1.1262215 | | 5. A.E. Lord, Acoustic emission, In: Physical Acoustics XI, ed. by W.P. Mason. Academic Press, New York and London, 1975, p. 289-353. https://doi.org/10.1016/B978-0-12-477911-2.50011-9 | | 6. V.P. Veleshchuk and O.V. Lyashenko, Acoustic emission of light-emitting structures on the A3 B5 base determined by direct current // Ukrainsky fiz. zhurnal 48(9), p. 981-985 (2003) (in Ukrainian). | | 7. G.O. Sukach, V.V. Kidalov, A.S. Revenko, V.M. Chobanyuk, D.M. Freik, Physical and chemical aspects of substrate materials for the epitaxial growing GaN films (Review) // Physics and chemistry of solid state 8(2) p. 227-239 (2007) (in Ukrainian). | | 8. V.P. Veleshchuk, O.V. Lyashenko, Yu.A. Myagchenko, and R.G. Chuprina, Evolution of electroluminescence spectra and the acoustic emission of epitaxial structures GaAsP // Zhurnal prikladnoi spektroskopii 71(4) p. 553-557 (2004) (in Russian). https://doi.org/10.1023/B:JAPS.0000046297.98718.aa | | 9. V.P. Veleshchuk, O.I. Vlasenko, O.V. Lyashenko, and R.G. Chuprina, Acoustic emission and degradation processes in heterostructures of optoelectronic devices // Bulletin of the University of Kiev. Series: Physics & Mathematics. No. 7, p. 4-5 (2005). | | 10. T. Ikoma, M. Ogura, Y. Adachi, Acousticemission study of defects in GaP light-emitting diodes // Appl. Phys. Lett. 33(5), p. 414-415 (1978). https://doi.org/10.1063/1.90397 | | 11. M. Ogura, Y. Adachi, T. Ikoma, Acoustic emission from gallium arsenide single crystals during deformation // J. Appl. Phys. 50(11) p. 6745-6749 (1979). https://doi.org/10.1063/1.325919 | | 12. O.I. Vlasenko, Z.K. Vlasenko, Extended defects and their influence on the electronic properties of narrow-gap CdHgTe solid solutions // Optoelectronics and semiconductor technics No. 39, p. 27-50 (2004) (in Russian). | | 13. V.V. Evstropov, M. Dzhumaeva, Yu.V. Zhilyaev, N. Nazarov, A.A. Sitnikova and L.M. Fedorov, The dislocation origin and model of excess tunnel current in GaP p-n structures // Semiconductors 34(11), p. 1305-1310 (2000). https://doi.org/10.1134/1.1325428 | | 14. A.L. Polyakova, Deformation of Semiconductors and Semiconductor Devices. Nauka, Moscow, 1979, p. 230 (in Russian). | | 15. G.L. Bir, G.E. Pikus, Symmetry and Deformation Effects in Semiconductors. Nauka, Moscow, 1972, p. 584 (in Russian). | | 16. O. Ueda, H. Imai, T. Fujiwara, S. Yamakoshi, T. Sugawara, and T. Yamaoka, Abrupt degradation of three types of semiconductor light-emitting diodes at high temperature // J. Appl. Phys. 51(10), p. 5316-5325 (1980). https://doi.org/10.1063/1.327445 | | 17. W.A. Brantley, O.G. Lorimor, P.D. Dapkus, S.E. Haszhko, and R.H. Saul, Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy // J. Appl. Phys. 46(6), p. 2629-2637 (1975). https://doi.org/10.1063/1.321941 | | 18. D.R. James, S.H. Carpenter, Relationship between acoustic emission and dislocation kinetics in crystalline solids // J. Appl. Phys. 42(12) p. 4685-4697 (1971). https://doi.org/10.1063/1.1659840 | | 19. G.A. Sukach, E.P. Potapenko, V.V. Kidalov, P.F. Oleksenko, Nitrides of the third group - perspectives of development and application (Review) // Optoelectronics and Semiconductor Technics No. 38 p. 265-293 (2003) (in Russian). | | 20. E.F. Venger, R.V. Konakova, G.S. Korotchenkov, V.V. Milenin, E.V. Russu, I.V. Prokopenko, Interphase Interactions and Degradation Mechanisms in Metal-InP and Metal-GaAs Structures. КТNК, Кyiv, 1999, p. 260 (in Russian). | | 21. J.P. Hirth, and J. Lothe, Theory of Dislocations. Атomizdat, Мoscow, 1972, p. 600 (in Russian). | | 22. X. Guo, E.F. Schubert, Current crowding in GaN/InGaN light emitting diodes on insulating substrates // J. Appl. Phys. 90(8), p. 4191-4195 (2001). https://doi.org/10.1063/1.1403665 | |
|
|