Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (3) P. 240-250 (2009).
DOI: https://doi.org/10.15407/spqeo12.03.240

References

1. V. Osinsky, Information conception of image perception at solid state lighting // Semiconductor Physics, Quantum Electronics & Optoelectronics 10, No. 3, p. 30-43 (2007).
https://doi.org/10.15407/spqeo10.03.030
2. V. Osinsky, P. Oleksenko, A. Palagin, et al., The problems of integration of heteroelectronic structures with silicon integrated circuits // Tekhnologiya and konstruirovaniye v elektronnoi apparature No. 1, p. 3-17 (1999) (in Russian).
3. V. Osinsky, V. Verbitsky, Yu. Mokeev et al., White superluminescent LED and the method of its production // Patent of Ukraine #56544A, 17.07.2002.
4. V.I. Osinsky, Сosmic nanotechnologies for creation of heterogeneous information environment. Technologies for creation of promising computer technique and systems with using the latest electronic base // Collected papers of Institute of Cybernetics, NAS of Ukraine, Kiev, 2000, p. 122- 128.
5. V. Osinsky, V. Verbitsky, Band gap engineering: ion realisation of virtual quantum nanoelectronic heterostructures // Optyko-elektronni informatsiinoenergetychni tekhnologii No. 1, p. 169-183 (2001) (in Russian).
6. V.I. Osinsky, Optoelectronic properties of heterogeneous semiconductors at superhigh time and space frequencies // Proc. 5-th Intern. Symposium on Recent Advances in Microwave Technology, Part II, Kiev, September 11-16, 1995, p. 433-436.
7. V.I. Osinsky, Super high-speed optoelectronics: technological fundamentals and economics // Proc. SPIE. Optoelectronic Information Technologies 4425, p. 263-271 (2000).
https://doi.org/10.1117/12.429734
8. V. Osinsky, F. Katsapov, V. Privalov, Integrated LED structures obtained by gas charge epitaxy of GaAs1-xPx films // Proc. Belorussian Academy of Sciences, Phys.-math. series No. 5, p. 73-76 (1977).
9. V. Osinsky, F. Katsapov, E. Tyavlovskaya, Structural perfection of selective GaAs LED regions in Si substrate windows // Phys. status solidi (a) 82, No. 2, p. 174-179 (1984).
https://doi.org/10.1002/pssa.2210820208
10. Chen On, Chen-Ke Hsu, Light Mixing LED. US Patent No. 0006375A1, 2006.
11. V. Osinsky, F. Katsapov, E. Tyavlovskaya, The method of semiconductor structure production. Patent of USSR N 1245159A, 1984.
12. D. Mazunov, V. Osinsky, V. Verbitsky, V. Glotov, GaAs nitridization in low energy plazma // Proc. 6-th All-Russian Conference "Nitrides of gallium, indium and aluminum structures and devices", St.- Petersburg, June 18-20, 2008, p. 48.
13. A. Palagin, V. Osinsky, V. Verbitsky et al., Quantum Processor // Patent of Ukraine No. 57825, 2000.
14. Z.Z. Bandic, R.J. Hauenstein, M.L. O'Steen, T.C. McGill, Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures // Appl. Phys. Lett. 68(11), p. 1510-1512 (1996).
https://doi.org/10.1063/1.115682
15. V. Verbitsky, S. Osinsky, A. Sarikov, Calculation of elemental composition for graded bandgap A3 B5 structures for white LEDs // Fizicheskaya inzheneriya poverkhnosti 1, No. 3-4, p. 341-346 (2003) (in Russian).
16. G.B. Stringfellow, Miscibility gaps in quaternery III-V alloys // J. Crystal Growth 58, p. 194-202 (1982).
https://doi.org/10.1016/0022-0248(82)90226-3
17. V. Osinsky, N. Kostiukevich, Integral Optron // Patent of USSR No. 551730, 1973.
18. V. Osinsky, Integrated Optoelectronics. Nauka i tekhnika, Minsk, 1977, p. 248 (in Russian).
19. V. Osinsky, V. Labunov, G. Gorokh, N.M. Liahova, N.O. Liahova, D. Solovey, Template layers for Si/A3 B5 nanostructures // Elektronika i svyaz', temat. vypusk "Problemy elektroniki" No. 1-2, p. 70-75 (2008) (in Russian).
20. V. Osinsky, I. Poliakov, G. Gorokh, N. Liahova, S.J. Pearton et al., Non-polar GaN prepared on Si substrates by hydride vapor phase epitaxy using anodized Al nanomask (to be published in Appl. Phys. Lett., 2009).
21. V. Osinsky, V. Zavalishin, A. Radkevich, D. Murchenko, I. Tuchinsky, Yu. Trocenko, V. Grunianska, Diode source for common lighting made by hybrid integration of A3 B5 RGB chips with Si transistor structures // Elektronika i svyaz', temat. vypusk "Problemy elektroniki" No. 1-2, p. 84-89 (2008) (in Russian).
22. V. Osinsky, I. Tuchinsky, V. Zhora, V. Grunianska, N. Liakhova, A. Rubanchuk, Flip-chip LED packing technology used flexible carriers on polyimide base // Elektronika i svyaz', temat. vypusk "Problemy elektroniki" No. 2, p. 5-8 (2006) (in Russian).