Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 251-254.
https://doi.org/10.15407/spqeo12.03.251

Photo-thermoinduced changes of transmission spectra of As40-xSbxS60 amorphous layers
V.M. Rubish1, E.B. Gera1, M.M. Pop2, V.M. Maryan1, S.O. Kostyukevych3, N.L. Moskalenko3, D.G. Semak2, K.V. Kostyukevych3, A.A. Kryuchin4, V.V. Petrov4

1Uzhgorod Scientific-Technological Center of the Institute for Information Recording, NAS of Ukraine, 4, Zamkovi Skhody str., 88000 Uzhgorod, Ukraine, e-mail: center_uzh@email.uz.ua
2Uzhgorod National University, 46, Pidhirma str., 88000 Uzhgorod, Ukraine
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
4Institute for Information Recording, NAS of Ukraine, 2, Shpaka str., 03142 Kyiv, Ukraine

Abstract. The results of investigation of the As 40-x Sb x S 60 (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads to the absorption edge shift into the longwave spectral region. The values of pseudogap width E g are determined. Optical characteristic changes of films are caused by photo-thermostructural transformations taking place in them under irradiation and annealing.

Keywords: amorphous film, arsenic chalcogenides, transmission spectra, photo- thermostructural transformations, information optical recording.

Full Text (PDF)

Back to N3 Volume 12