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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 255-259.
Modeling of photons trapping effect on the performance
of HPT-LED Optoelectronic Integrated Device (OEID)
Rad. Eng. Dept., NCRRT, P.O. Box 29, Nasr City, Atomic Energy Authority, Egypt
E-mail: Shaban_45@yahoo.com
Abstract. The effect of photons trapped at the LED side due to total internal reflection
on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in
this paper. The device is composed of a Heterojunction Phototransistor (HPT) and a
Light Emitting Diode (LED). The expressions describing the transient response of the
output photons flux, the rise time, and the output derivative are derived. The effect of the
various device parameters on the transient response is outlined. The results show that the
transient response of these types of devices is strongly dependent on the ratio of these
trapped photons in the LED part. Also the device under consideration can be changed
from switching mode to the amplification mode, if the fractions of trapped photons
exceed a specified value. This type of the model can be exploited as an optical amplifier,
optical switching device and other applications.
Keywords: optoelectronic integrated device, heterojunction phototransistor, light
emitting diode.
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