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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 260-263.
Dynamic characteristics of QWIP-HBT-LED
optoelectronic integrated devices
Radiation Engineering Department, 3 Ahmed Elzomor Str., NCRRT, P.O. Box 29,
Nasr City, Atomic Energy Authority, Cairo, Egypt
Abstract. This paper presents an evaluation of the transient performance of an
optoelectronic integrated device. This device is composed of a quantum well infrared
photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
Evaluation of its transient response is based on the frequency response of the constituent
devices. Analytical expressions describing the transient behavior, output derivative as a
measure of speed, and the rise time are derived. The numerical results show that the
transient performance of the version under consideration is mainly based on the
individual quantum efficiencies and is improved with their growth. The device speed and
rise time are enhanced with the increase of the cut-off frequency of HBT.
Keywords: optoelectronic integrated device, quantum well infrared photodetector, light
emitting diode, heterojunction bipolar transistor.
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