Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 284-286.
https://doi.org/10.15407/spqeo12.03.284

Modification of properties of the glass-Si3N4-Si-SiO2 structure at laser treatment
R.V. Konakova1, V.P. Kladko1, O.S. Lytvyn1, O.B. Okhrimenko1, B.G. Konoplev2, A.M. Svetlichnyi2, V.N. Lissotschenko3

1V. Lashkaryov Institute of Semiconductor Physics, NAS Ukraine 41 Prospect Nauky, Kyiv 03028, Ukraine Tel.: (380-44) 525-62-61; e-mail: olga@isp.kiev.ua
2Taganrog Technological Institute of the Southern Federal University, Taganrog, Russia
3LIMO-Lissotschenko-Mikrooptik GmbH, Dortmund, Germany

Abstract. We studied the effect of laser treatment on the glassSi 3 N 4 SiSiO 2 structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface.

Keywords: glass-Si3N4-Si-SiO2 structure, laser treatment, transmittance.

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