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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 290-293.
Structure and electrical properties of In2Se3<Mn> layered crystals
I.M. Frantsevich Institute for Problems of Materials Science, NAS of Ukraine, Chernivtsi Department
5, Iryna Vilde str., 58001 Chernivtsi, Ukraine,
Phone: (0372)52-51-55, fax (03722) 3-60-18: e-mail: chimsp@ukrpost.ua
Abstract. Investigations of the crystalline structure and electrical properties of
In 2 Se 3 1 wt. %Mn and In 2 Se 3 6 wt. % Mn crystals have been carried out. We have
found formation of a substitutional solid solution for In 2 Se 3 1 % Mn single crystals as
well as existence of two phases (In 2 Se 3 and MnIn 2 Se 4 ) in polycrystalline ingots
In 2 Se 3 6 % Mn. Temperature dependences of the conductivities across (σ C ) and along
(σ ||C ) the crystallographic c axis were measured in the range of 80 to 400 K. From the
anisotropy σ C /σ ||C of conductivity temperature dependences of the energy barrier value
ΔЕ δ between the layers were calculated for the crystals under investigations.
Keywords: indium selenide, layered crystal, X-ray diffraction, substitutional solid
solution, conductivity.
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