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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 259-261.
Relaxation process features of photoconductivity
in p-i-n structures
1Physical-Technical Institute, 100084 Tashkent, Uzbekistan
E-mail: detector@uzsci.net
Abstract. We studied the relaxation processes of photoconductivity in Si(Li) p-i-n
structures. It has been shown that a clearly pronounced “well” is observed in time
dependences of the photovoltage pulse after photoexcitation of these structures. Our
experimental data are indicative of abnormal relaxation of photoconductivity in silicon p-
i-n diodes.
Keywords: photoconductivity, relaxation, well.
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