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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 273-275.
Peculiarities of the influence of high- and low-energy proton and
electron irradiations on the characteristics of silicon solar cells
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
45, prospect Nauky, 03028 Кyiv, Ukraine,
Phone +380 (44) 525-5043, fax +380 (44) 525-5788; e-mail: vvch@isp.kiev.ua
Abstract. Experimental data on degradation of photovoltaic and photoenergetic
characteristics of silicon solar cells exposed by high-energy electrons and protons as well
as low-energy protons have been obtained. The previously proposed theoretical model
that can describe degradation of the solar cell characteristics under the influence of
irradiation, including that creating spatially inhomogeneous defect distribution over the
structure thickness, has been experimentally confirmed. It was ascertained that in the
cases of 1 MeV energy electron and 20 MeV energy proton irradiations, when there is a
relatively homogeneous defect distribution over the silicon solar cell thickness, its short-
circuit current degrades faster than the open-circuit voltage. On the contrary, in the case
of low-energy 0.1 MeV proton irradiation, when the distribution of defects is spatially
inhomogeneous, the open-circuit voltage degrades faster than the short-circuit current.
Keywords: silicon solar cell, irradiation, degradation.
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