Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 276-279.
https://doi.org/10.15407/spqeo13.03.276

Optical properties and structure of As-Ge-Se thin films
I.D. Tolmachov1, A.V. Stronski1, M. Vlcek2

1V. Lashkaryov Institute of Semiconductor Physics, NAS Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
2University of Pardubice, Faculty of Chemical Technology, Studentská 573, 532 10 Pardubice, Czech Republic E-mail: tolmach_igor@mail.ru

Abstract. Thin chalcogenide films with compositions As 10 Ge 22.5 Se 67.5 and As 12 Ge 33 Se 55 have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimated to have high values of the nonlinear refractive index.

Keywords: chalcogenide films, optical properties, nonlinearity, Raman spectra.

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