Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 294-297.
https://doi.org/10.15407/spqeo13.03.294

Sponge-like nanostructured silicon for integrated emitters
A. Hubarevich1, P. Jaguiro1, Y. Mukha1, A. Smirnov1, Ya. Solovjov2

1Belarusian State University of Informatics and Radioelectronics, Laboratory of Information Displays 6, P. Brovki str., 220013 Minsk, Republic of Belarus
2 SOE “Transistor Factory”, 16, Korzhenevskogo str., 220108 Minsk, Republic of Belarus

Abstract. A new approach to nanoporous silicon formation is proposed. Anomalies both in low current densities and low fluorine ion concentrations, which is lead to low uniformity of formed porous silicon, are under consideration. It is shown that at very low current densities and fluorine ion concentration high uniformity, high porosity nanoporous silicon layers can be created. Structural, electrical and optical properties of porous silicon formed in a wide range of current densities, doping levels of silicon substrates and fluorine concentrations are presented.

Keywords: porous silicon, nanostructure, electroluminescence.

Full Text (PDF)

Back to N3 Volume 13