Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 314-320.
Effect of strong magnetic field on surface polaritons in ZnO
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Using the attenuated total reflectance technique, we studied the effect of strong
uniform magnetic field Hr on the main properties of surface polaritons in ZnO single crystals. The used orientations were y C || , C k ⊥r, C xy || , k Hr r⊥ , y H ||r, k k x = , 0 , = z y k ; the free charge carrier concentration varied from 16 10 3.9 × up to 3 18 cm 10 0.2 − × . It has been shown that three dispersion curves exist in the zinc oxide single crystals for the above orientation. The possibility of excitation of an additional dispersion branch in optically anisotropic semiconductors placed into magnetic field is
found using ZnO single crystals as an example. The damping coefficients for surface
phonon and plasmon-phonon polaritons have been determined.
Keywords: ZnO single crystal, strong magnetic field, surface polariton, damping
coefficient.
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