Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 314-320.
https://doi.org/10.15407/spqeo13.03.314


Effect of strong magnetic field on surface polaritons in ZnO
E.F. Venger1, A.I. Ievtushenko2, L.Yu. Melnichuk2, O.V. Melnichuk2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine
2Mykola Gogol Nezhyn State University 2, Kropyv’yanskogo str., 16600 Nezhyn, Ukraine; e-mail: mov310@mail.ru

Abstract. Using the attenuated total reflectance technique, we studied the effect of strong uniform magnetic field Hr on the main properties of surface polaritons in ZnO single crystals. The used orientations were y C || , C k ⊥r, C xy || , k Hr r⊥ , y H ||r, k k x = , 0 , = z y k ; the free charge carrier concentration varied from 16 10 3.9 × up to 3 18 cm 10 0.2 − × . It has been shown that three dispersion curves exist in the zinc oxide single crystals for the above orientation. The possibility of excitation of an additional dispersion branch in optically anisotropic semiconductors placed into magnetic field is found using ZnO single crystals as an example. The damping coefficients for surface phonon and plasmon-phonon polaritons have been determined.

Keywords: ZnO single crystal, strong magnetic field, surface polariton, damping coefficient.

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