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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 321-325.
Electro-optic effect in GaN/Al0.15 Ga0.85N single quantum wells
for optical switch
LPSCM, Department of Physics, Faculty of Sciences Semlalia
Cadi Ayaad University P.O. Box 2390, 40000 Marrakech, Morocco
Abstract. The second-harmonic generation (SHG) susceptibility of wurtzite type gallium
nitride with single quantum wells has been theoretically investigated in the framework of
the compact-density-matrix approach. The confined wave functions and energies of
electrons in GaN/Al x Ga 1-x N have been calculated in the effective-mass approximation,
solving the Schrödinger equation by Numerov’s method using the second and fourth
order approximations for the derivatives. The numerical results for typical
GaN/Al 0.15 Ga 0.85 N quantum wells show that a strong SHG effect can be realized in
electric field by choosing some optimized structural parameters.
Keywords: second-harmonic generation, wurtzite quantum well, effects of electric field,
density matrix approach, Numerov’s method.
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