Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 326-329.
https://doi.org/10.15407/spqeo13.03.326

Acoustic-emission method for controlling the defect-formation process in light-emitting structures
O.V. Lyashenko*, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky 03028 Kyiv, Ukraine Phone:+38(044)-5258437; e-mail:vvvit@ukr.net
*Taras Shevchenko Kyiv National University, 2, Academician Glushkov Ave., 03022 Kyiv, Ukraine; E-mail: lyashenk@mail.univ.kiev.ua

Abstract. Сomplex researches of light-emitting structures based on А 3 В 5 compounds have been carried out. It has been shown that at current loading exceeding the acoustic- emission threshold, there arises a change in the electroluminescence intensity, fluctuation of current and light. It has been ascertained that natural ageing leads to a general improvement of some practically important parameters of light-emitting structures, in particular to increase of maximal admissible currents and reliability.

Keywords: acoustic emission, light-emitting structure, electroluminescence.

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