|
Semiconductor
Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N
3. P. 237-242.
References 1. S.-H. Tang, E. Y. Chang, M. Hudait, J.-S. Maa, C.-W. Liu, G.-L. Luo, H.-D. Trinh, and Y.-H. Su, High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate . Appl. Phys. Lett. 98(16), 161905(1-3) (2011).2. H. Gleiter, Nanostructured materials: basic concepts and microstructure . Acta Materialia, 48(1), p. 1-29 (2000). https://doi.org/10.1016/S1359-6454(99)00285-2 3. R.A. Andrievskii and A.V. Ragulya, Nanostructured Materials. Academia, Moscow, 2005. 4. W.B. Jordan, E.D. Carlson, T.R. Johnson, and S. Wagner . Mat. Res. Soc. Symp. Proc. 762, paper A6.5 (2003). 5. I. Stavarache, A.-M. Lepadatu, T. Stoica, and M.L. Ciurea, Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2 . Appl. Surf. Sci. 285, Part B, p. 175-179 (2013). 6. M. Fujii, Y. Inoue, S. Hayashi, and K. Yamamoto, Hopping conduction in SiO2 films containing C, Si, and Ge clusters . Appl. Phys. Lett. 68(26), p. 3749-3751 (1996). https://doi.org/10.1063/1.115994 7. M. Fujii, O. Mamezaki, S. Hayashi, and K. Yamamoto, Current transport properties of SiO2 films containing Ge nanocrystals . J. Appl. Phys. 83(3), p. 1507-1512 (1998). https://doi.org/10.1063/1.366858 8. B.I. Shklovskii and A.L. Efros, The Electronic Properties of Doped Semiconductors. Nauka, Moscow, 1979. 9. I. Stavarache, A.-M. Lepadatu, A.V. Maraloiu, V.S. Teodorescu, and M.L. Ciurea, Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix . J. Nanopart. Res. 14(7), Article: 930(1-9) (2012). |