Semiconductor
Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N
3. P. 295-300.
References 1. E. Fazio, E. Barletta, F. Barreca, and F. Neri, S. Trusso, Investigation of a nanocrystalline silicon phase embedded in SiOx thin films grown by pulsed laser deposition . J. Vac. Sci. Technol. B, 23, p. 519-522 (2005).https://doi.org/10.1116/1.1880252 2. A.G. Nassiopoulou, in: H.S. Nalwa (Ed.), Encyclopedia of Nanoscience and Nanochnology, 9, p. 793-813 (2004). 3. H.R. Philipp, Optical properties of non-crystalline Si, SiO, SiOx and SiO2 . J. Phys. Chem. Solids, 32, p. 1935-1945 (1971). https://doi.org/10.1016/S0022-3697(71)80159-2 4. O.L. Bratus', A.A. Evtukh, V.A. Ievtukh, V.G. Litovchenko, Nanocomposite SiO2(Si) films as a medium for non-volatile memory . J. Non. Cryst. Solids, 354, p. 4278-4281 (2008). https://doi.org/10.1016/j.jnoncrysol.2008.06.037 5. C. Pace, F. Crupi, S. Lombardo, C. Gerardi, G. Cocorullo, Room-temperature single-electron effects in silicon nanocrystal memories . Appl. Phys. Lett. 87, 182106 (2005) https://doi.org/10.1063/1.2123377 6. J. De Castro, F. Lopez, J. Melendez, and M. Fernandez, Optical properties of ion-assisted deposited SiO thin films . Thin Solid Films, 241, p. 202-205 (1993). https://doi.org/10.1016/0040-6090(94)90426-X 7. H. Rinnert, M. Vergnat, G. Marchal, and A. Burneau, Strong visible photoluminescence in amorphous SiOx and SiOx:H thin films prepared by thermal evaporation of SiO powder . J. Lumin. 80, p. 445-448 (1998). https://doi.org/10.1016/S0022-2313(98)00145-8 8. E. Desbiens, R. Dolbec, and M. A. El Khakani, Reactive pulsed laser deposition of high-k silicon dioxide and silicon oxynitride thin films for gate-dielectric applications . J. Vac. Sci. Technol. A, 20, p. 1157-1161 (2002). https://doi.org/10.1116/1.1467357 9. M. Lackner, W. Waldhauser, R. Ebner, W. Lenz, C. Suess, G. Jakopic, G. Leising, and H. Hutter, Pulsed laser deposition: a new technique for deposition of amorphous SiOx thin films . Surf. Coat. Technol. 163-164, p. 300-305 (2003). https://doi.org/10.1016/S0257-8972(02)00612-6 10. C.-J. Lin, G.-R. Lin, Y.-L. Chueh, L.-J. Chou, Synthesis of silicon nanocrystals in silicon-rich SiO2 by rapid CO2 laser annealing . Electrochem. Solid-State Lett. 8, p. D43-D45 (2005). https://doi.org/10.1149/1.2109327 11. A. Janotta, Y. Dikce, M. Schmidt, C. Eisele, Light-induced modification of a-SiOx:H. I. Metastability . J. Appl. Phys. 93, p. 4060-4068 (2004). https://doi.org/10.1063/1.1667008 12. B. Gallas, C.-C. Kao, S. Fisson, G. Vuye, J. Rivory, Y. Bernard, C. Belouet, Laser annealing of SiOx thin films . Appl. Surf. Sci. 185, p. 317-320 (2002). https://doi.org/10.1016/S0169-4332(01)00983-7 13. D. Nesheva, C. Raptis, A. Perakis, I. Bineva, Z. Aneva, Z. Levi, S. Alexandrova, and H. Hofmeister, Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films . J. Appl. Phys. 92, p. 4678-4683 (2002). https://doi.org/10.1063/1.1504176 14. X.Y. Chen, Y.F. Lu, Y.H. Wu, B.J. Cho, M.H. Liu, D.Y. Dai, and W.D. Song, The mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient . J. Appl. Phys. 93, p. 6311-6319 (2003). https://doi.org/10.1063/1.1569033 15. O.O. Gavrylyuk, O.Yu. Semchyk, O.L. Bratus, A.A. Evtukh, O.V. Steblova, L.L. Fedorenko, Study of thermophysical properties of crystalline silicon and silicon-rich silicon oxide layers . Appl. Surf. Sci. 302, p. 213-215 (2014). https://doi.org/10.1016/j.apsusc.2013.09.171 16. O.O. Gavrylyuk, O.Yu. Semchyk, O.V. Steblova, A.A. Evtukh, L.L. Fedorenko, Study of the distribution of temperature profiles in nonstoichiometric SiOx films at laser annealing . Ukr. J. Phys. 59, p. 712-714 (2014). https://doi.org/10.15407/ujpe59.07.0712 17. O.L. Bratus', A.A. Evtukh, O.S. Lytvyn, M.V. Voitovych, V.O. Yukhymchuk, Structural properties of nanocomposite SiO2(Si) films obtained by ion-plasma sputtering and thermal annealing . Semiconductor Physics, Quantum Electronics & Optoelectronics, 14(2), p. 247-255 (2011). https://doi.org/10.15407/spqeo14.02.247 18. G.Ya. Krasnikov and N.P. Zaitseva, System Silicon-Silicon Dioxide in Submicron Very Large Integrated Circuits. Technosphere, Moscow, 2003 (in Russian). 19. K. Hubner, Chemical bond and related properties of SiO2. VII. Structure and electronic properties of the SiOx region of Si-SiO2 interfaces . Phys. Status Solidi (a), 61(2), p. 665 (1980). https://doi.org/10.1002/pssa.2210610241 20. P.Ya. Sushko and S.K. Kryskiv, Method of compact groups in the theory of permittivity of heterogeneous systems . Zhurnal tekhnicheskoi fiziki, 79(3), p. 97 (2009), in Russian. 21. D.E. Aspnes, Optical properties of Si, in: Properties of Crystalline Silicon, Ed. R. Hull. INSPEC IEE, London, 1999, p. 677. 22. A. Lehmann, L. Schumann, K. Hubner. Optical phonons in amorphous silicon oxides . Phys. Status Solidi (b), 151, p. 317-323 (1987). 23. I.P. Lisovskii, V.G. Litovchenko, V.B. Lozinskii, S.I. Frolov, H. Flietner, W. Fussel, E. Schmidt, IR study of short-range and local order in SiO2 and SiOx films . J. Non-Cryst. Solids, 187, p. 91 (1995). https://doi.org/10.1016/0022-3093(95)00118-2 24. M.C. Rossi, S. Salvatori, M. Burchielli, G. Conte, Optical and electrical properties of silicon nanocrystals formed by CW laser irradiation of amorphous silicon oxides . Thin Solid Films, 383, p. 267-270 (2001). https://doi.org/10.1016/S0040-6090(00)01599-6 |