Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 3. P. 330-333.
DOI: https://doi.org/10.15407/spqeo18.03.330

References

1. Keohra Sangwal, Etching of Crystals. Theory, Experiment and Application. Moscow, Mir, 1990.
 
2. V.A. Perevoshchikov, Processes of chemical-and-dynamical polishing the semiconductor surface. Vysokochistye veshchestva, No 2, p. 5-29 (1995), in Russian.
 
3. United States Patent 8844511; 30.09.14. Current Intern. Class: B28D 1/06. Method for slicing a multiplicity of wafers from a crysal composed of semiconductor material. Kaeser; Maximilian, Blank; Albert (DE); Assignee: Siltonic AG (DE).-Appl. No 13/009957; Filed: 20.01.11.
 
4. S.P. Timoshenkov, V.V. Kalugin, Ye.P. Prokopiev, Chemical processing the surface of semiconductor wafers in the course of manufacturing KNI and micro-electronic facilities. Khimicheskaya tekhnologiya, No 12. p. 3-11 (2004), in Russian.
 
5. Yu. S. Zharkikh, S.V. Lisochenko, S.S. Novikov, O.V. Tretyak, Controlling the state of silicon wafer surface after chemical processing. Novyye tekhnologii, No 1-2, p. 18-20 (2004), in Russian.
 
6. John Zabasajja, Tushar Merchant, Belinda Ng, Suman Banerjee, David Green, Modeling and characterization of tungsten chemical and mechenical polishing processes. J. Electrochem. Soc. 148(2), p. G73-G77 (2001).
https://doi.org/10.1149/1.1341246
 
7. V.N. Tomashik, Z.F. Tomashik, A.V. Lyubchenko, A.V. Fomin, Liquid-phase etching the semiconductor compounds of AIIBIV type and physico-chemical processes at their interfaces (Review). Optoelektronika i poluprovodnikovaya tekhnika, No 28, p. 3-15 (1994), in Russian.
 
8. Z.F. Tomashik, V.N. Tomashik. Physico-chemical interaction of semiconductors of AIIBIV and AIIIBV types with liquid etching components. Kondensirovannyye sredy i mezhfaznyye granitsy. No 4, p. 336-341 (2002), in Russian.
 
9. N.N. Grigoriyev, M.Yu. Kravetskyi, G.A. Pa-shchenko, S.A. Sypko, A.V. Fomin, Modelling the processes of contactless chemical-and-mechanical manufacturing the semiconductor sub-strates. Tekhnologiya i konstruirovaniye v electronnoi apparature, No 2, p. 36-40 (2003), in Russian.
 
10. N.N. Grigoriyev, M.Yu. Kravetskyi, G.A. Pashchenko, S.A. Sypko, A.V. Fomin, Kinetic characteristics of the process of contactless chemical-and-mechanical polishing the wafers. Fizicheskaya i khimicheskaya obrabotka materialov, No 2, p. 61-67 (2004), in Russian.