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Semiconductor
Physics, Quantum Electronics and Optoelectronics, 21 (3), P. 256-262 (2018). References
1. Gribnikov Z.S. Negative differential conductivity in a multilayer heterostructure. Fizika Tekhnika Poluprovodn. 1972. 6, No 7. P. 1380–1382.
2. Hess K., Morkoç H., Shichijo H., and Streetman B.G. Negative differential resistance through real-space electron transfer. Appl. Phys. Lett. 1979. 35, No 6. P. 460–471.
3. Keever M., Shichijo H., Hessatal K. Measurements of hot electron conduction and real-space transfer in GaAs-AlxGa1−xAs heterojunction layers. Appl. Phys. Lett. 1981. 38, No 1. P. 36.
4. Pond J.M., Kirchoefer S.W., and Gukauskas E.J. Microwave amplification to 2.5 GHz in a quantum state transfer device. Appl. Phys. Lett. 1985. 47, No 11. P. 1175.
5. Savaki N., Suzuki M., Takagaki Y., Goto H. and Akasaki I. Photo-luminecence studies of hot electrons and real space transfer effect in a double quantum well superlattice. Superlattices and Microelectronics. 1986. 2, No 4. P. 281.
6. Bigelow J.M. and Leburton J.P. Tunneling real-space transfer induced by wave function hybridization in modulation doped heterostructures. Appl. Phys. Lett. 1990. 57. P. 795–797.
7. Schöl E., Aoki K. Novel mechanism of a real-space transfer oscillator. Appl. Phys. Lett. 1991. 58. P. 1277.
8. Döttling R., Schöl E. Oscillatory bistability of real-space transfer in semiconductor heterostructures. Phys. Rev. B. 1992. 45. P. 1935.
9. Jakumeit J., Tutt M. and Pavidis D. Quantum state transfer in double quantum-well devices J. Appl. Phys. 1994. 76, No 11. P. 7428.
10. Gribnikov Z.S., Hess K. and Kosinovsky G.A. Nonlocal and nonlinear transport in semiconductors: Real-space transfer effects. J. Appl. Phys. 1995. 77, No 4. P. 1337.
11. Rui Q. Yang, Quantum real-space transfer in semiconductor heterostructures. Appl. Phys. Lett. 1998. 73, No 22. P. 3265–3267.
12. Mitin V., Kochelap V., Stroscio M.F. Quantum Heterostructures: Microelectronics and Optoelectronics. Cambridge University Press, 1999.
13. Khalil H., Sun Y., Balkan N. et al. Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells. Nanoscale Res. Lett. 2011. 6. P. 191.
14. Luryi S., Kastalsky A., Gossard A.C., Hendel R. A field-effect transistor with a negative differential resistance. IEEE Electron.Device Lett. 1984. EDL-5. P. 57–60.
15. Luryi S., Kastalsky A. et al. Charge injection transistor based on real-space hot-electron transfer. IEEE Trans. Elect. Dev. 1984. 31, No 6. P. 832–839.
16. Luryi Serge. Light-emitting devices based on the real-space transfer of hot electons Appl. Phys. Lett. 1991. 58, No 16. P. 1727.
17. Takeyoshi Sugayaa and Kazuhiro Komori, InGaAs dual channel transistors with negative differential resistance. Appl. Phys. Lett. 2006. 88. P. 142107.
18. Grubin H.L., Mitin V.V., Schöll E., Shaw M.P. The Physics of Instabilities in Solid State Electron Devices. Springer Science & Business Media. 2013.
19. Balagula R.M., Vinnichenko M.Ya., Makhov I.S., Firsov D.A., Vorobjev L.E. Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields. Semiconductors. 2016. 50, Issue 11. P. 1425–1430.
20. Balagula R.M., Vinnichenko M.Ya., Makhov I.S., Sofronov A.N., Firsov D.A., Vorobjev L.E. Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field. Semiconductors. 2017. 51, Issue 3. P. 363–366.
21. Aleshkin V.Ya. and Dubinov A.A. Inversion of the electron population in subbands of dimensional quantization with longitudinal transport in tunnel-coupled quantum wells. Semiconductors. 2002. 36, Issue 6. P. 685–690.
23. Šermukšnis E., Liberis J., Matulionis A., Avrutin V., Ferreyra R., Özgürand Ü., Morkoç H. Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels. Semicond. Sci. Technol. 2015. 30. P. 035003.
24. Belevskii P.A., Vinoslavskii M.N., Poroshin V.N., Baidus N.V., Zvonkov B.N. Far-infrared radiation from n-InGaAs/GaAs quantum-well hetero-structures in high lateral electric fields under injection conditions. Semiconductors. 2014. 48, Issue 5. P. 625–629.
25. Belevskii P.A., Vinoslavskii M.N., Poroshin V.N., Baidus N.V., Zvonkov B.N. Interband and intraband radiation from the n-heterostructures with quantum wells under the conditions of injection in high lateral electric fields. Physica E. 2015. 74. P. 328.
26. Levinshtein M.E., Rumyantsev S.L, and Shur M.S. (Editors). Handbook: Series of Semiconductor Parameters, Vol.2: Ternary and Quarternary A3B5 Compaunds, AlGaAs, GaInP, GaInAs, GaInSb, GaAsSb, InAsSb, GaInAsP, GaInAsSb. World Scientific, Singapore–New Jersey–London–Hong Kong, 1999.
27. Blank T.V., Gol'dberg Yu.A. Mechanisms of current flow in metal-semiconductor ohmic contacts. Semiconductors. 2007. 41, Issue 11. P. 1263–1292.
28. Montes Bajo M., Dunn G., Stephen A., Khalid A., Cumming D.R.S., Oxley C.H., Glover J., and Kuball M. Impact ionization electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities. J. Appl. Phys. 2013. 113. P. 124505.
29. Zappe H.P. et al., Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field effect transistors. J. Appl. Phys. 1990. 68. P. 2501–2503.
30. Weilu Gao, Xuan Wang, Rui Chen, David B. Eason, Gottfried Strasser, Jonathan P. Bird, and Junichiro Kono. Electroluminescence from GaAs/AlGaAs heterostructures in strong in-plane electric fields: Evidence for k- and real-space charge transfer. ACS Photonics. 2015. 2. P. 1155.
31. Sablikov V.A., Ryabushkin O.A., Polyakov S.V. Effect of lateral transport of photoinduced charge carriers in a heterostructure with a two-dimensional electron gas. Semiconductors. 1997. 31, Issue 4. P. 329–334.
32. Butov L.V., Imamoglu A., Mintsev A.V., Kampman K.L. and Gossard A.C. Photoluminescence kinetics of indirect exitons in GaAs/AlxGa1-xAs coupled quantum wells. PRB. 1999. 59, Issue 3. P. 1625.
33. Nido M., Alexander M.G.W., and Ruhle W.W. Nonresonant electron and hole tunnelling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells. Appl. Phys. Lett. 1990. 58, Issue 4. P. 355.
34. Feldman J., Peter G. et al. Dependence of radiative exciton lifetimes in quantum wells. Phys. Rev. Lett. 1987. 59. P. 2337.
35. Tsuchiya M., Matsusue T., and Sakaki H. Tunneling escape rate of electrons from quantum well in double-barrier heterostructures. Phys. Rev. Lett. 1987. 59. P. 2356.
36. Tada T., Yamagichi A. et al. Tunneling process in AlAs/GaAs double quantum wells studied by photo-luminescence. J. Appl. Phys. 1988. 63. P. 5491.
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