TY  - JOUR
TI  - The advancement of silicon-on-insulator (SOI) devices and their basic properties
AU  - T.E. Rudenko
AU  - A.N. Nazarov
AU  - V.S. Lysenko
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 23
IS  - 3
SP  - 227
EP  - 252
PY  - 2020
DO  - 10.15407/spqeo23.03.227
UR  - https://doi.org/10.15407/spqeo23.03.227
AB  - Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal-oxide-semiconductor (CMOS) ICs. It also allows extending the miniaturization of CMOS devices into the nanometer region. In this review paper, we briefly describe evolution of SOI technology and its main areas of application. The basic technological methods for fabrication of SOI wafers are presented. The principal advantages of SOI devices over bulk silicon devices are described. The types of SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) and their basic electrical properties are considered.
KW  - silicon-on-insulator (SOI)
KW  - metal-oxide-semiconductor field-effect transistor (MOSFET)
KW  - multiple-gate transistor
KW  - ultra-thin-body SOI transistor
KW  - fully-depleted SOI transistor
KW  - interface coupling
ER  -