@article{spqeo23n3p253,
  title = {Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review)},
  author = {Yu.Yu. Bacherikov and R.V. Konakova and O.B. Okhrimenko},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  volume = {23},
  number = {3},
  pages = {253--259},
  year = {2020},
  doi = {10.15407/spqeo23.03.253},
  url = {https://doi.org/10.15407/spqeo23.03.253},
  abstract = {In this work, comparative characteristics of thin oxide films (OF) of titanium, erbium, and dysprosium formed on silicon carbide substrates in the presence and absence of a porous silicon carbide (por-SiC) layer have been considered. It has been shown that regardless of the presence of a porous buffer layer in the TiO2(Er2O3, Dy2O3)/por-SiC/SiC and TiO2(Er2O3, Dy2O3)/SiC structures, oxide layers of the approximately equal thickness are formed, and quality of the interface in OF/SiC structures is higher than that in the OF/por-SiC/SiC structures. An increase in the time and temperature of rapid thermal annealing makes it possible to improve the quality of the oxide film/substrate interface regardless of the presence of a porous buffer layer in the structure. In this case, the narrowest interface “oxide film/buffer porous layer/substrate” is observed for the TiO2 /por-SiC/SiC structures. The TiO2 /por-SiC/SiC structures are most sensitive to changes in the parameters of rapid thermal annealing, and the Er2O3/por-SiC/SiC structures are the most stable.},
  keywords = {nterface, thin oxide films, porous silicon carbide, Auger spectrometry, optical absorption, photoluminescence.}
}