TY  - JOUR
TI  - Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review)
AU  - Yu.Yu. Bacherikov
AU  - R.V. Konakova
AU  - O.B. Okhrimenko
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 23
IS  - 3
SP  - 253
EP  - 259
PY  - 2020
DO  - 10.15407/spqeo23.03.253
UR  - https://doi.org/10.15407/spqeo23.03.253
AB  - In this work, comparative characteristics of thin oxide films (OF) of titanium, erbium, and dysprosium formed on silicon carbide substrates in the presence and absence of a porous silicon carbide (por-SiC) layer have been considered. It has been shown that regardless of the presence of a porous buffer layer in the TiO2(Er2O3, Dy2O3)/por-SiC/SiC and TiO2(Er2O3, Dy2O3)/SiC structures, oxide layers of the approximately equal thickness are formed, and quality of the interface in OF/SiC structures is higher than that in the OF/por-SiC/SiC structures. An increase in the time and temperature of rapid thermal annealing makes it possible to improve the quality of the oxide film/substrate interface regardless of the presence of a porous buffer layer in the structure. In this case, the narrowest interface “oxide film/buffer porous layer/substrate” is observed for the TiO2 /por-SiC/SiC structures. The TiO2 /por-SiC/SiC structures are most sensitive to changes in the parameters of rapid thermal annealing, and the Er2O3/por-SiC/SiC structures are the most stable.
KW  - nterface
KW  - thin oxide films
KW  - porous silicon carbide
KW  - Auger spectrometry
KW  - optical absorption
KW  - photoluminescence
ER  -