TY  - JOUR
TI  - Study of structural, electrical and optical properties of MoRe0.001Se1.999 single crystal
AU  - A.M. Vora
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 23
IS  - 3
SP  - 267
EP  - 270
PY  - 2020
DO  - 10.15407/spqeo23.03.267
UR  - https://doi.org/10.15407/spqeo23.03.267
AB  - In the present work, structural, electrical and optical properties of MoRe0.001Se1.999 single crystal grown using the direct vapour transport (DVT) method have been reported. The crystal has been structurally characterized by XRD, determining its lattice parameters a and c and by measuring the X-ray density. The obtained data of the Hall effect and thermoelectric power measurements support that this crystal is of p-type in nature. The direct and indirect band gap measurements were also carried out for this semiconducting material. It has been ascertained that the rhenium doping has a considerable effect on the properties of MoSe2 single crystal.
KW  - single crystal
KW  - direct vapour transport (DVT) technique
KW  - structural
KW  - electrical and optical properties
ER  -