@article{spqeo23n3p271,
  title = {Determination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes},
  author = {A. Latreche},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  volume = {23},
  number = {3},
  pages = {271--275},
  year = {2020},
  doi = {10.15407/spqeo23.03.271},
  url = {https://doi.org/10.15407/spqeo23.03.271},
  abstract = {The current-voltage-temperature profiling method has been used with 4H-SiC Schottky barrier diodes and presented for determining the electron effective mass in 4H-SiC. The extracted electron effective mass has been found to be temperature dependent, it decreases with increasing the temperature. Moreover, a good agreement was found between our obtained values of electron effective mass (m* = 0.18m0, 0.21m0) at room temperature and other values that are obtained by different methods.},
  keywords = {4H-SiC, Schottky diode, electron effective mass, I-V method, reverse current, thermionic emission, tunneling current.}
}