TY  - JOUR
TI  - Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field
AU  - R.A. Redko
AU  - G.V. Milenin
AU  - V.V. Milenin
AU  - S.M. Redko
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 23
IS  - 3
SP  - 302
EP  - 307
PY  - 2020
DO  - 10.15407/spqeo23.03.302
UR  - https://doi.org/10.15407/spqeo23.03.302
AB  - In this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defects transformation due to the random events related with defect subsystem modification has been proposed. The radiation power of electromagnetic waves emitted by electrons in the studied semiconductor has been estimated. Fitted parameters for the long-term transformation intensity of photoluminescence and diffusion factor for appearing defects have been calculated.
KW  - hotoluminescence
KW  - dislocation
KW  - random event
KW  - resonance
KW  - ion-plasma frequency
KW  - weak magnetic field
KW  - microwave radiation
ER  -