@article{Leyderman2021248,
  title = {Non-recombination injection mode},
  author = {A.Yu. Leyderman and R.A. Ayukhanov and R.M. Turmanova and A.K. Uteniyazov and E.S. Esenbaeva},
  journal = {Semiconductor Physics, Quantum Electronics & Optoelectronics},
  year = {2021},
  volume = {24},
  number = {3},
  pages = {248-254},
  doi = {10.15407/spqeo24.03.248},
  keywords = {non-recombination injection mode, accumulation of charge carriers at the n-n+ junction, ambipolar diffusion, drift of carriers},
  abstract = {A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure.}
}