TY  - JOUR
AU  - A.Yu. Leyderman
AU  - R.A. Ayukhanov
AU  - R.M. Turmanova
AU  - A.K. Uteniyazov
AU  - E.S. Esenbaeva
TI  - Non-recombination injection mode
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 3
SP  - 248
EP  - 254
PY  - 2021
DO  - 10.15407/spqeo24.03.248
UR  - https://doi.org/10.15407/spqeo24.03.248
AB  - A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure.
KW  - non-recombination injection mode
KW  - accumulation of charge carriers at the n-n+ junction
KW  - ambipolar diffusion
KW  - drift of carriers
ER  -