TY  - JOUR
AU  - K.А. Ismailov
AU  - X.M. Iliev
AU  - M.O. Tursunov
AU  - B.K. Ismaylov
TI  - Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 3
SP  - 255
EP  - 260
PY  - 2021
DO  - 10.15407/spqeo24.03.255
UR  - https://doi.org/10.15407/spqeo24.03.255
AB  - Formation of complexes of impurity Mn atoms with impurity atoms of group VI elements (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place, which possibly leads to formation of new Si2BVI++Mn binary unit cells in the silicon crystal lattice. It has been shown that in the samples Si<S, Mn>, Si<Se, Mn> and Si<Te, Mn>, an intense complex formation occurs at the temperatures 1100, 820 and 650°C, respectively.
KW  - silicon
KW  - electrically neutral molecule
KW  - diffusion
KW  - thermal annealing
ER  -