@article{Strelchuk2021261,
  title = {Growth-sector dependence of morphological, structural and optical features in boron-doped HPHT diamond crystals},
  author = {V.V. Strelchuk and A.S. Nikolenko and P.M. Lytvyn and S.O. Ivakhnenko and T.V. Kovalenko and I.M. Danylenko and S.V. Malyuta},
  journal = {Semiconductor Physics, Quantum Electronics & Optoelectronics},
  year = {2021},
  volume = {24},
  number = {3},
  pages = {261-271},
  doi = {10.15407/spqeo24.03.261},
  keywords = {boron doped HPHT diamond, Raman spectroscopy, AFM microscopy, micro-photogrammetry},
  abstract = {Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron 111 faces and insignificant area of cube 001, rhombo-dodecahedron 110 and tetragon-trioctahedron 311 faces were obtained using solution-melt crystallization at high pressure 6.5 GPa and temperatures 1380…1420 °C. Using the Fe-Al solvent, which allows controlled incorporation of boron dopant between 2·10–4…10–2 at.% made it possible to vary the electro-physical properties of the crystals. Methods of micro-photogrammetry, atomic force microscopy, and micro-Raman spectroscopy were applied to reveal sectorial inhomogeneity of impurity composition and morphology of different crystal faces. The obtained crystals were shown to have high structural perfection and boron concentration ranging approximately from 1·1017 up to 7·1018 cm–3. An increase in boron concentration increases the area of 111 faces relatively to the total crystal area. Nanoscale morphological features like growth terraces, step-bunching, dendrite-like nanostructures, columnar substructures, negative growth pyramids on different crystal faces are shown to reflect peculiarities of carbon dissolution at high pressures and temperatures. The changes in the crystals’ habit and surface morphology are discussed in relation to inhomogeneous variation of thermodynamic conditions of crystal growth and dissolution at different boron concentrations.}
}