TY  - JOUR
AU  - V.V. Strelchuk
AU  - A.S. Nikolenko
AU  - P.M. Lytvyn
AU  - S.O. Ivakhnenko
AU  - T.V. Kovalenko
AU  - I.M. Danylenko
AU  - S.V. Malyuta
TI  - Growth-sector dependence of morphological, structural and optical features in boron-doped HPHT diamond crystals
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 3
SP  - 261
EP  - 271
PY  - 2021
DO  - 10.15407/spqeo24.03.261
UR  - https://doi.org/10.15407/spqeo24.03.261
AB  - Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron {111} faces and insignificant area of cube {001}, rhombo-dodecahedron {110} and tetragon-trioctahedron {311} faces were obtained using solution-melt crystallization at high pressure 6.5 GPa and temperatures 1380…1420 °C. Using the Fe-Al solvent, which allows controlled incorporation of boron dopant between 2·10–4…10–2 at.% made it possible to vary the electro-physical properties of the crystals. Methods of micro-photogrammetry, atomic force microscopy, and micro-Raman spectroscopy were applied to reveal sectorial inhomogeneity of impurity composition and morphology of different crystal faces. The obtained crystals were shown to have high structural perfection and boron concentration ranging approximately from 1·1017 up to 7·1018 cm–3. An increase in boron concentration increases the area of {111} faces relatively to the total crystal area. Nanoscale morphological features like growth terraces, step-bunching, dendrite-like nanostructures, columnar substructures, negative growth pyramids on different crystal faces are shown to reflect peculiarities of carbon dissolution at high pressures and temperatures. The changes in the crystals’ habit and surface morphology are discussed in relation to inhomogeneous variation of thermodynamic conditions of crystal growth and dissolution at different boron concentrations.
KW  - boron doped HPHT diamond
KW  - Raman spectroscopy
KW  - AFM microscopy
KW  - micro-photogrammetry
ER  -