TY  - JOUR
AU  - Yu.Yu. Bacherikov
AU  - M.N. Mirzayev
AU  - A.G. Zhuk
AU  - O.B. Okhrimenko
AU  - N.V. Doroshkevich
AU  - V.V. Kidalov
AU  - V.Yu. Goroneskul
TI  - Preparation of quaternary compounds Cu 2 ZnSnS 4 by using the self-propagating high-temperature synthesis
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 3
SP  - 272
EP  - 276
PY  - 2021
DO  - 10.15407/spqeo24.03.272
UR  - https://doi.org/10.15407/spqeo24.03.272
AB  - Possibility to prepare finely dispersed Cu2ZnSnS4 by using the method of self-propagating high-temperature synthesis has been studied in this work. Investigations of Raman scattering and IR-Fourier spectroscopy of the synthesized finely dispersed material have been carried out. The analysis of the Raman and IR-Fourier spectra showed that the synthesized material in the process of preparing is formed with a kesterite structure with the inclusion of a certain amount of secondary phases in the form of sulfides and stannites.
KW  - self-propagating high-temperature synthesis
KW  - quaternary semiconductors
KW  - kesterite
KW  - Raman scattering
KW  - FTIR spectroscopy
ER  -