Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (3), P. 254-261 (2022).

Spin-dependent polarization response in HgCdTe hot-electron bolometers

F.F. Sizov1*, J.V. Gumenjuk-Sichevska1, S.N. Danilov2, Z.F. Tsybrii1

1 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prosp. Nauky, 03680 Kyiv, Ukraine
2 Terahertz Center, University of Regensburg, 93040 Regensburg, Germany
*Corresponding author e-mail:

Abstract. The paper reports the detection of strong polarization-dependent photo-responses in direct narrow-gap (Eg = 0.084 eV at T = 80 K) HgCdTe thin-layer biased and unbiased hot-electron bolometers (HEBs) with receiving antennas under elliptically polarized THz radiation. The observed effects are assumed to be due to the Rashba spin splitting in HgCdTe, caused by large spin-orbit interactions. The studied detectors demonstrate free-carrier polarization-dependent sensitivity to laser radiation with h 0.0044 eV (ν = 1.07 THz) and 0.0025 eV (ν = 0.6 THz), i.e., with photon energies much less than the band-gap (hν << Eg) at T = 80 and 300 K. The polarization-dependent photocurrent in HgCdTe HEBs with and without applied external constant electric field is shown to have angular dependence of photocurrent with directional reversal on switching the photon helicity.

Keywords: THz antenna-coupled hot-electron bolometer, THz elliptically polarized radiation, polarization-dependent photo-response, narrow-gap HgCdTe.

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