@article{Sizov2022254,
  title = {Spin-dependent polarization response in HgCdTe hot-electron bolometers},
  author = {F.F. Sizov and J.V. Gumenjuk-Sichevska and S.N. Danilov and Z.F. Tsybrii},
  journal = {Semiconductor Physics, Quantum Electronics & Optoelectronics},
  year = {2022},
  volume = {25},
  number = {3},
  pages = {254-261},
  doi = {10.15407/spqeo25.03.254},
  keywords = {THz antenna-coupled hot-electron bolometer, THz elliptically polarized radiation, polarization-dependent photo-response, narrow-gap HgCdTe.},
  abstract = {The paper reports the detection of strong polarization-dependent photo-responses in direct narrow-gap (Eg = 0.084 eV at T = 80 K) HgCdTe thin-layer biased and unbiased hot-electron bolometers (HEBs) with receiving antennas under elliptically polarized THz radiation. The observed effects are assumed to be due to the Rashba spin splitting in HgCdTe, caused by large spin-orbit interactions. The studied detectors demonstrate free-carrier polarization-dependent sensitivity to laser radiation with h 0.0044 eV (ν = 1.07 THz) and 0.0025 eV (ν = 0.6 THz), i.e., with photon energies much less than the band-gap ( h ν << Eg) at T = 80 and 300 K. The polarization-dependent photocurrent in HgCdTe HEBs with and without applied external constant electric field is shown to have angular dependence of photocurrent with directional reversal on switching the photon helicity.}
}
