TY  - JOUR
AU  - F.F. Sizov
AU  - J.V. Gumenjuk-Sichevska
AU  - S.N. Danilov
AU  - Z.F. Tsybrii
TI  - Spin-dependent polarization response in HgCdTe hot-electron bolometers
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 25
IS  - 3
SP  - 254
EP  - 261
PY  - 2022
DO  - 10.15407/spqeo25.03.254
UR  - https://doi.org/10.15407/spqeo25.03.254
AB  - The paper reports the detection of strong polarization-dependent photo-responses in direct narrow-gap (Eg = 0.084 eV at T = 80 K) HgCdTe thin-layer biased and unbiased hot-electron bolometers (HEBs) with receiving antennas under elliptically polarized THz radiation. The observed effects are assumed to be due to the Rashba spin splitting in HgCdTe, caused by large spin-orbit interactions. The studied detectors demonstrate free-carrier polarization-dependent sensitivity to laser radiation with h 0.0044 eV (ν = 1.07 THz) and 0.0025 eV (ν = 0.6 THz), i.e., with photon energies much less than the band-gap ( h ν << Eg) at T = 80 and 300 K. The polarization-dependent photocurrent in HgCdTe HEBs with and without applied external constant electric field is shown to have angular dependence of photocurrent with directional reversal on switching the photon helicity.
KW  - THz antenna-coupled hot-electron bolometer
KW  - THz elliptically polarized radiation
KW  - polarization-dependent photo-response
KW  - narrow-gap HgCdTe
ER  -