TY  - JOUR
AU  - S.G. Petrosyan
AU  - S.R. Nersesyan
TI  - The peculiarity of capacitance-voltage characteristics of the metal-insulator-nanowire structure
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 25
IS  - 3
SP  - 289
EP  - 293
PY  - 2022
DO  - 10.15407/spqeo25.03.289
UR  - https://doi.org/10.15407/spqeo25.03.289
AB  - The quasi-static capacitance-voltage characteristics of the metal-insulator-nanowire structure have been theoretically studied with account of the surface states at the nanowire-insulator interface. At small radii, possible is the case when the entire bulk of nanowire is depleted before the onset of inversion of the conduction type near the surface will occur. In this case, there is a strong deviation of the capacitance-voltage characteristic from that in the standard MIS structure: with increasing voltage, the capacitance of the structure tends not to a constant value equal to the capacitance of the dielectric layer, but to zero.
KW  - nanowire
KW  - capacitance
KW  - surface states
KW  - MIS structure
ER  -