Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (3), P. 278-302 (2023).
DOI: https://doi.org/10.15407/spqeo26.03.278
Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review)
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine Abstract.
Detection of photoluminescence (PL) in traditionally non-luminescent Si material (a typical indirect band semiconductor) attracts great attention both in the scientific aspect and for applications in the field of micro- and nanoelectronics and photoelectronics. Despite the success in technology and understanding of many features inherent to its PL characteristics, many problems have not yet been resolved. In particular – what is the origin of PL lines: quantum size, molecular complexes within SiO2, interface or volume localized states, etc. How to achieve the increase in the PL intensity and to provide excitation of it in different parts of the spectrum. The proposed review systematizes results of studies associated with these problems concerning the original technologies for creation of Si nanocrystals (nc-Si) and various research methods. In conclusion, we summarize the results on the properties of nc-Si-SiO2 luminescent structures depending on their technology of synthesis, photo- and structural features and application prospects for micro- and nanoelectronics as well as photoelectronics.
Keywords:silicon, nanocluster, photoluminescence, ion-beam synthesis, doping, annealing.
V.P. Melnik, V.G. Popov, B.M. Romanyuk, S.V. Antonin*, A.A. Evtukh
41, prosp. Nauky, 03680 Kyiv, Ukraine
*Corresponding author e-mail: antoninsv@gmail.com
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