¹Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska str., 01601 Kyiv, Ukraine
²V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
³Institute of Physics, National Academy of Sciences of Ukraine, 46, prospect Nauky, 03028 Kyiv, Ukraine
*Correspondence author e-mail: nataliya.berezovska@knu.ua

Abstract. The results of direct femtosecond laser structuring of GaAs wafer coated with continuous semitransparent gold (Au) film are presented. The obtained structures demonstrate a combination of different features, namely laser-induced periodic surface structures (LIPSS) on semiconductor and metal film, nanoparticles, Au islands, and fragments of exfoliated Au film. The properties of Au-GaAs samples are studied with scanning electron microscopy (SEM), Raman scattering, and photoluminescence (PL) spectroscopy. The behaviour of phonon modes and enhancement of band-edge PL of Au-GaAs composite sample are discussed. The Raman spectra of Au-GaAs sample processed at different levels of irradiation pulse energy reveal forbidden TO and allowed LO phonon modes for selected geometry of experiment, as well as the manifestation of GaAs surface oxidation and amorphization. A 12-fold increase of PL intensity for Au-GaAs sample with LIPSS compared to initial GaAs surface is observed. The detected PL enhancement is caused by an increase of absorption in GaAs due to the light field enhancement near the Au nanoislands and a decrease of nonradiative surface recombination. The blue shift of PL band is caused by the quantum size effect in GaAs nano-sized features at laser processed surface. The combination of GaAs substrate with surface micro- and nanostructures with Au nanoparticles can be useful for photovoltaic and sensorics applications.

Keywords: laser-induced periodic surface structures, femtosecond laser pulses, gallium arsenide, metal-semiconductor metasurface, Raman scattering, photoluminescence.

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