Semiconductor Physics, Quantum Electronics & Optoelectronics, 27 (3), P. 269-273 (2024).
DOI: https://doi.org/10.15407/spqeo27.03.269

Analysis of the transformation of radiative recombination spectra of n-GaN after magnetic field treatments based on the queueing theories concept

G.V. Milenin1, R.A. Redko1,2

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
45, prospect Nauky, 03028 Kyiv, Ukraine
2State University of Information and Communication Technologies, 7, Solomenska str., 03110 Kyiv, Ukraine
E-mails: milenin.gv@gmail.com; redko.rom@gmail.com



Abstract. Long-term changes in radiative recombination spectra of n-GaN after magnetic field treatments have been studied. It has been found out that the intensity of the radiation of donor-acceptor pairs remains unchanged over time, while the intensity of edge photoluminescence significantly decreases. These features have been explained by assuming the formation of additional donor levels and using the concepts of the queueing theory of donor-acceptor recombination.

Keywords: gallium nitride, magnetic field, radiative recombination, queueing theory.

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